PRAKASAM, Mythili; VIRAPHONG, Oudomsack; VEBER, Philippe; PECHEV, Stanislav; DECOURT, Rodolphe; MAGLIONE, Mario; VILLORA, Encarnacion G.; SHIMAMURA, Kiyoshi

doi:10.1016/j.jcrysgro.2011.12.048

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PRAKASAM, Mythili
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

VIRAPHONG, Oudomsack
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

VEBER, Philippe
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

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Journal of Crystal Growth. 2012, vol. 340, n° 1, p. 6-12

Elsevier

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Quasi binary semiconductor compound of Cd/Ga/Te and the crystal dynamics involving the solubility of the gallium in CdTe were studied. The stiochiometry of the cadmium, gallium and telluride were optimized to obtain the singlecrystals of Cd0.89Ga0.11Te (CGT). CGT singlecrystals were grown by vertical Bridgman method for utility in thermoelectric devices. The optimum temperature profile was studied for obtaining the singlecrystal and the zincblende phase for CGT was identified. The structural analysis and refinement was done with Rietveld measurements. The crystal compositional analysis homogeneity was studied and the segregation of the telluride was analyzed by energy dispersive spectrum. The electrical resistivity was measured. The thermal conductivity measurement on CGT singlecrystals reveals the contribution of the phonon scattering leading to lower value of thermal conductivity.< Réduire

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Growth from melt

Bridgman technique

Single crystal growth

Semiconducting II-VI materials

Growth from melt

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Structural analysis, growth and characterization of cadmiumgalliumtelluride (Cd0.89Ga0.11Te) thermoelectric semiconductor single crystals

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