SAADEDDIN, Iyad; HILAL, Hikmat S.; DECOURT, Rodolphe; CAMPET, Guy; PECQUENARD, Brigitte

doi:10.1016/j.solidstatesciences.2012.04.021

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SAADEDDIN, Iyad
College of Sciences

HILAL, Hikmat S.
College of Sciences

DECOURT, Rodolphe
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

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Solid State Sciences. 2012, vol. 14, n° 7, p. 914-919

Elsevier

Résumé en anglais

Indiumoxideco-doped with tin and zinc (ITZO) ceramics have been successfully prepared by direct sintering of the powders mixture at 1300 °C. This allowed us to easily fabricate large highly dense target suitable for sputtering transparent conductingoxide (TCO) films, without using any cold or hot pressing techniques. Hence, the optimized ITZO ceramic reaches ahigh relative bulk density (∼ 92% of In2O3 theoretical density) and higher than the well-known indiumoxidedoped with tin (ITO) prepared under similar conditions. All X-ray diagrams obtained for ITZO ceramics confirms a bixbyte structure typical for In2O3 only. This indicates ahigher solubility limit of Sn and Zn when they are co-doped into In2O3 forming a solid-solution. A very low value of electrical resistivity is obtained for [In2O3:Sn0.10]:Zn0.10 (1.7 × 10−3 Ω cm, lower than ITO counterpart) which could be fabricated to high dense ceramic target suing pressure-less sintering.< Réduire

Mots clés en anglais

Co-doping

ITZO

Dense ceramic

Low resistivity

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Indium oxide co-doped with tin and zinc: A simple route to highly conducting high density targets for TCO thin-film fabrication

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