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hal.structure.identifierMaterials Research Centre
dc.contributor.authorPERUMAL, S.
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorGORSSE, Stéphane
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorAIL, Ujwala
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorCHEVALIER, Bernard
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorDECOURT, Rodolphe
hal.structure.identifierMaterials Research Centre
dc.contributor.authorUMARJI, Arun M.
dc.date.issued2013
dc.identifier.issn0022-2461
dc.description.abstractEnCrSi2 was earlier reported to be an interesting thermoelectric material for high temperature applications because of its high oxidation resistance and good mechanical properties. In order to enhance its figure of merit, Mn at Cr site and Al at Si site were substituted into CrSi2. Our results indicate that Cr1−x Mn x Si2−x Al x solid solutions exhibit significantly lower thermal conductivity and a higher figure of merit than CrSi2.
dc.language.isoen
dc.publisherSpringer Verlag
dc.subject.enThermoelectric materials
dc.subject.enSilicon
dc.subject.enChromium
dc.title.enEffect of co-substitution of Mn and Al on thermoelectric properties of chromium disilicide
dc.typeArticle de revue
dc.identifier.doi10.1007/s10853-012-6732-4
dc.subject.halChimie/Matériaux
bordeaux.journalJournal of Materials Science
bordeaux.page227-231
bordeaux.volume48
bordeaux.issue1
bordeaux.peerReviewedoui
hal.identifierhal-00776463
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00776463v1
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