A 27dBm Ku-Band SiGe Power Amplifier Working up to 90°C with High Robustness to the 2:1 SWR
| dc.rights.license | open | en_US |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | COQUILLAS, B. | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | KERHERVE, E. | |
| dc.contributor.author | REDOIS, S. | |
| dc.contributor.author | AMIAUD, A.-C. | |
| dc.contributor.author | ROUSSEL, L. | |
| dc.contributor.author | LOUIS, B. | |
| dc.contributor.author | ITCIA, E. | |
| dc.contributor.author | MERLET, T. | |
| dc.date.accessioned | 2022-08-26T08:09:07Z | |
| dc.date.available | 2022-08-26T08:09:07Z | |
| dc.date.issued | 2022-04-03 | |
| dc.identifier.uri | oai:crossref.org:10.23919/eumic50153.2022.9784063 | |
| dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/140589 | |
| dc.description.abstractEn | This paper presents a compact Ku-Band SiGe cascode power amplifier (PA) with a saturated output power (Psat) higher than 27dBm up to 90°C and a highly robust power combination to the Standing Wave Ratio (SWR). Improved transistor and twisted coupler layout techniques are combined in a balanced architecture. As a proof of concept, the PA was implemented with a 0.13-µm SiGe BiCMOS technology. The measured performances at 18GHz show a Psat of 27.4dBm and 27.1dBm and a peak-PAE of 25.8% and 24.5% at 30°C and 90°C, respectively. With a 2:1 SWR the PAE and Psat drop less than 7.2% and 1.5dB, respectively. | |
| dc.language.iso | EN | en_US |
| dc.publisher | IEEE | en_US |
| dc.source | crossref | |
| dc.subject.en | defense industry | |
| dc.subject.en | design methodology | |
| dc.subject.en | directional coupler | |
| dc.subject.en | power amplifier | |
| dc.subject.en | temperature measurement | |
| dc.title.en | A 27dBm Ku-Band SiGe Power Amplifier Working up to 90°C with High Robustness to the 2:1 SWR | |
| dc.type | Communication dans un congrès avec actes | en_US |
| dc.identifier.doi | 10.23919/eumic50153.2022.9784063 | en_US |
| dc.subject.hal | Sciences de l'ingénieur [physics]/Electronique | en_US |
| bordeaux.hal.laboratories | Laboratoire d’Intégration du Matériau au Système (IMS) - UMR 5218 | en_US |
| bordeaux.institution | Université de Bordeaux | en_US |
| bordeaux.institution | Bordeaux INP | en_US |
| bordeaux.institution | CNRS | en_US |
| bordeaux.conference.title | 16th European Microwave Integrated Circuits Conference, EuMIC 2021 | en_US |
| bordeaux.country | gb | en_US |
| bordeaux.title.proceeding | EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference | en_US |
| bordeaux.conference.city | Londres | en_US |
| bordeaux.peerReviewed | oui | en_US |
| bordeaux.import.source | dissemin | |
| hal.export | false | |
| workflow.import.source | dissemin | |
| dc.rights.cc | Pas de Licence CC | en_US |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2022-04-03&rft.au=COQUILLAS,%20B.&KERHERVE,%20E.&REDOIS,%20S.&AMIAUD,%20A.-C.&ROUSSEL,%20L.&rft.genre=proceeding |
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