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Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

dc.rights.licenseopenen_US
dc.contributor.authorNGO, Thi Huong
dc.contributor.authorCOMYN, Rémi
dc.contributor.authorCHENOT, Sébastien
dc.contributor.authorBRAULT, Julien
dc.contributor.authorNEMOZ, Maud
dc.contributor.authorVENNÉGUÈS, Philippe
dc.contributor.authorDAMILANO, Benjamin
dc.contributor.authorVÉZIAN, Stéphane
dc.contributor.authorFRAYSSINET, Eric
dc.contributor.authorCOZETTE, Flavien
dc.contributor.authorDEFRANCE, Nicolas
dc.contributor.authorLECOURT, François
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorLABAT, Nathalie
dc.contributor.authorMAHER, Hassan
dc.contributor.authorCORDIER, Yvon
dc.date.accessioned2022-08-25T14:06:13Z
dc.date.available2022-08-25T14:06:13Z
dc.date.issued2022-09-01
dc.identifier.issn0022-0248en_US
dc.identifier.urioai:crossref.org:10.1016/j.jcrysgro.2022.126779
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/140583
dc.description.abstractEnIn the present study, the selective sublimation of the p-GaN cap layer of Al(Ga)N/GaN HEMTs is developed to replace the commonly used dry etching with no risk of damage in the barrier layer in order to fabricate enhanced mode transistors. Thanks to this approach, enhancement-mode transistors are fabricated with a threshold voltage between 0 V and +1.5 V depending on the barrier layer aluminum molar fraction and thickness. Furthermore, we show the benefit of the combination of selective sublimation with the regrowth of AlGaN to reduce access resistance in these transistors which can be co-integrated with depletion-mode devices fabricated in the same process in areas where p-GaN has been totally evaporated.
dc.description.sponsorshipCo-intégration des transistors GaN à enrichissement et à déplétion pour les circuits de communication RF de la prochaine génération - ANR-16-CE24-0026en_US
dc.description.sponsorshipRéseau national sur GaN - ANR-11-LABX-0014en_US
dc.language.isoENen_US
dc.sourcecrossref
dc.subject.enA1. Selective sublimation
dc.subject.enA3. Local area epitaxy
dc.subject.enB1. Group III-nitrides
dc.subject.enB3. High electron mobility transistors
dc.title.enSelective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors
dc.typeArticle de revueen_US
dc.identifier.doi10.1016/j.jcrysgro.2022.126779en_US
dc.subject.halSciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectroniqueen_US
bordeaux.journalJournal of Crystal Growthen_US
bordeaux.page126779en_US
bordeaux.volume593en_US
bordeaux.hal.laboratoriesLaboratoire d’Intégration du Matériau au Système (IMS) - UMR 5218en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
bordeaux.import.sourcedissemin
hal.exportfalse
workflow.import.sourcedissemin
dc.rights.ccPas de Licence CCen_US
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