Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors
Idioma
EN
Article de revue
Este ítem está publicado en
Journal of Crystal Growth. 2022-09-01, vol. 593, p. 126779
Resumen en inglés
In the present study, the selective sublimation of the p-GaN cap layer of Al(Ga)N/GaN HEMTs is developed to replace the commonly used dry etching with no risk of damage in the barrier layer in order to fabricate enhanced ...Leer más >
In the present study, the selective sublimation of the p-GaN cap layer of Al(Ga)N/GaN HEMTs is developed to replace the commonly used dry etching with no risk of damage in the barrier layer in order to fabricate enhanced mode transistors. Thanks to this approach, enhancement-mode transistors are fabricated with a threshold voltage between 0 V and +1.5 V depending on the barrier layer aluminum molar fraction and thickness. Furthermore, we show the benefit of the combination of selective sublimation with the regrowth of AlGaN to reduce access resistance in these transistors which can be co-integrated with depletion-mode devices fabricated in the same process in areas where p-GaN has been totally evaporated.< Leer menos
Palabras clave en inglés
A1. Selective sublimation
A3. Local area epitaxy
B1. Group III-nitrides
B3. High electron mobility transistors
Proyecto ANR
Co-intégration des transistors GaN à enrichissement et à déplétion pour les circuits de communication RF de la prochaine génération - ANR-16-CE24-0026
Réseau national sur GaN - ANR-11-LABX-0014
Réseau national sur GaN - ANR-11-LABX-0014
Centros de investigación