Epitaxial growth of GdN on silicon substrate using an AlN buffer layer
dc.contributor.author | NATALI, F. | |
dc.contributor.author | PLANK, N. | |
dc.contributor.author | GALIPAUD, J. | |
dc.contributor.author | RUCK, B.J. | |
dc.contributor.author | TRODAHL, H. J. | |
hal.structure.identifier | Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA] | |
dc.contributor.author | SEMOND, F. | |
hal.structure.identifier | Centre d'Etudes Nucléaires de Bordeaux Gradignan [CENBG] | |
dc.contributor.author | SORIEUL, S. | |
dc.contributor.author | HIRSCH, L. | |
dc.date.issued | 2010-12-01 | |
dc.identifier.issn | 0022-0248 | |
dc.language.iso | en | |
dc.publisher | Elsevier | |
dc.title.en | Epitaxial growth of GdN on silicon substrate using an AlN buffer layer | |
dc.type | Article de revue | |
dc.identifier.doi | 10.1016/j.jcrysgro.2010.09.030 | |
dc.subject.hal | Physique [physics]/Physique [physics]/Instrumentations et Détecteurs [physics.ins-det] | |
bordeaux.journal | Journal of Crystal Growth | |
bordeaux.page | 3583-3587 | |
bordeaux.volume | 312 | |
bordeaux.peerReviewed | oui | |
hal.identifier | in2p3-00585159 | |
hal.version | 1 | |
hal.popular | non | |
hal.audience | Non spécifiée | |
hal.origin.link | https://hal.archives-ouvertes.fr//in2p3-00585159v1 | |
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