Recrystallization of amorphous ion implanted silicon carbide after thermal annealing
hal.structure.identifier | Service de recherches de métallurgie physique [SRMP] | |
dc.contributor.author | MIRO, S. | |
hal.structure.identifier | Service de recherches de métallurgie physique [SRMP] | |
dc.contributor.author | COSTANTINI, J.-M. | |
hal.structure.identifier | INSTRU | |
dc.contributor.author | SORIEUL, S. | |
hal.structure.identifier | Service de recherches de métallurgie physique [SRMP] | |
dc.contributor.author | GOSMAIN, L. | |
hal.structure.identifier | CSNSM PCI | |
dc.contributor.author | THOMÉ, L. | |
dc.date.issued | 2012 | |
dc.identifier.issn | 0950-0839 | |
dc.description.abstractEn | Single crystals of 6H-SiC were implanted at room temperature with 4-MeV Au ions to a fluence of 1015cm 2. Raman spectra showed that full amorphization was achieved. The recrystallization process was studied by micro-Raman spectrometry after isochronal thermal annealing between 700 and 1500 C. The spectra permitted the evolution upon annealing of Si-C bonds, and also of Si-Si and C-C bonds, to be followed. Amorphous phase relaxation takes place below 700 C; then recrystallization of the 6H polytype sets in at 700 C. At 900 C crystallites with different crystalline states are formed. Moreover, Raman spectra provide evidence of graphitic nanocluster formation at 1500 C. | |
dc.language.iso | en | |
dc.publisher | Taylor & Francis | |
dc.subject.en | SiC | |
dc.subject.en | Raman spectroscopy | |
dc.subject.en | recrystallization | |
dc.subject.en | irradiation effects | |
dc.title.en | Recrystallization of amorphous ion implanted silicon carbide after thermal annealing | |
dc.type | Article de revue | |
dc.identifier.doi | 10.1080/09500839.2012.713133 | |
dc.subject.hal | Planète et Univers [physics]/Sciences de la Terre/Minéralogie | |
bordeaux.journal | Philosophical Magazine Letters | |
bordeaux.page | 633-639 | |
bordeaux.volume | 92 | |
bordeaux.peerReviewed | oui | |
hal.identifier | in2p3-00739573 | |
hal.version | 1 | |
hal.popular | non | |
hal.audience | Non spécifiée | |
hal.origin.link | https://hal.archives-ouvertes.fr//in2p3-00739573v1 | |
bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Philosophical%20Magazine%20Letters&rft.date=2012&rft.volume=92&rft.spage=633-639&rft.epage=633-639&rft.eissn=0950-0839&rft.issn=0950-0839&rft.au=MIRO,%20S.&COSTANTINI,%20J.-M.&SORIEUL,%20S.&GOSMAIN,%20L.&THOM%C3%89,%20L.&rft.genre=article |
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