MIRO, S.; COSTANTINI, J.-M.; SORIEUL, S.; GOSMAIN, L.; THOMÉ, L.

doi:10.1080/09500839.2012.713133

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MIRO, S.
Service de recherches de métallurgie physique [SRMP]

COSTANTINI, J.-M.
Service de recherches de métallurgie physique [SRMP]

SORIEUL, S.
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Philosophical Magazine Letters. 2012, vol. 92, p. 633-639

Taylor & Francis

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Single crystals of 6H-SiC were implanted at room temperature with 4-MeV Au ions to a fluence of 1015cm 2. Raman spectra showed that full amorphization was achieved. The recrystallization process was studied by micro-Raman spectrometry after isochronal thermal annealing between 700 and 1500 C. The spectra permitted the evolution upon annealing of Si-C bonds, and also of Si-Si and C-C bonds, to be followed. Amorphous phase relaxation takes place below 700 C; then recrystallization of the 6H polytype sets in at 700 C. At 900 C crystallites with different crystalline states are formed. Moreover, Raman spectra provide evidence of graphitic nanocluster formation at 1500 C.< Leer menos

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SiC

Raman spectroscopy

recrystallization

irradiation effects

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Recrystallization of amorphous ion implanted silicon carbide after thermal annealing

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