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dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire des Composites Thermostructuraux [LCTS]
dc.contributor.authorDESENFANT, A.
dc.contributor.authorLADUYE, G.
hal.structure.identifierLaboratoire des Composites Thermostructuraux [LCTS]
dc.contributor.authorVIGNOLES, Gerard
IDREF: 070191875
hal.structure.identifierLaboratoire des Composites Thermostructuraux [LCTS]
dc.contributor.authorCHOLLON, Georges
dc.date.accessioned2021-06-23T08:37:29Z
dc.date.available2021-06-23T08:37:29Z
dc.date.issued2020-11-01
dc.identifier.issn1226-086Xen_US
dc.identifier.urioai:crossref.org:10.1016/j.jiec.2020.10.029
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/79258
dc.description.abstractEnThe chemical vapor deposition (CVD) of silicon carbide from vinyltrichlorosilane (VTS) was studied to identify a range of conditions leading to pure crystalline SiC. The deposition rate was recorded to evidence the various deposition regimes. Gas phase, elemental analyses and infiltration tests were also performed. Three distinct chemical reaction regimes were identified. In CVD conditions, carbon is co-deposited at low temperature while VTS is only partially decomposed. In infiltration conditions, the composition switches to pure SiC inside the porous substrate because of a depletion of reactive hydrocarbon species. Competing heterogeneous reactions are responsible for a hysteresis versus temperature, in both deposition rate and composition of the deposit. The high temperature domain is the most suitable to deposit pure crystalline SiC in CVD conditions. Hydrogen dilution strongly accelerates the homogeneous decomposition of VTS as compared to argon. Assumptions on the reaction mechanism were proposed describing the chemistry of this precursor.
dc.language.isoENen_US
dc.sourcecrossref
dc.subject.enChemical vapor deposition
dc.subject.enVinyltrichlorosilane
dc.subject.enSilicon carbide
dc.subject.enDeposition kinetics
dc.subject.enFTIR spectroscopy
dc.subject.enGas phase analysis
dc.title.enKinetic and gas-phase study of the chemical vapor deposition of silicon carbide from C2H3SiCl3/H2
dc.typeArticle de revueen_US
dc.identifier.doi10.1016/j.jiec.2020.10.029en_US
dc.subject.halChimie/Matériauxen_US
bordeaux.journalJournal of Industrial and Engineering Chemistryen_US
bordeaux.pagep. 145-158en_US
bordeaux.volume94en_US
bordeaux.hal.laboratoriesLaboratoire des Composites Thermo Structuraux (LCTS) - UMR 5801en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionCNRSen_US
bordeaux.institutionCEAen_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
bordeaux.import.sourcedissemin
hal.exportfalse
workflow.import.sourcedissemin
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