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Thermal Penetration Depth Analysis and Impact of the BEOL Metals on the Thermal Impedance of SiGe HBTs

hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorD'ESPOSITO, Rosario
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorBALANETHIRAM, Suresh
dc.contributor.authorBATTAGLIA, Jean-Luc
IDREF: 084712562
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorFREGONESE, Sebastien
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorZIMMER, Thomas
dc.date.accessioned2021-05-14T09:47:32Z
dc.date.available2021-05-14T09:47:32Z
dc.date.issued2017-10
dc.identifier.issn0741-3106
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/77054
dc.description.abstractEnIn this letter, we present a detailed investigation on how dynamic thermal phenomena take place in state of-the-art SiGe HBTs when excited by sinusoidal power dissipation. To give a better insight into the mechanisms leading to the thermal impedance (Z<sub>th</sub>) decay, we introduce the concept of thermal penetration depth; then, with the help of 3-D thermal simulations, we illustrate its effect on the spatial distribution of the temperature variations within the transistor structure, according to the frequency of operation. In order to experimentally analyze the impact on a real device, dedicated HBT structures are designed; they consist of multi-finger SiGe HBTs realized in B55 technology from STMicroelectronics,for which modifications are made in the back-end-of-line (BEOL) metallization or in the transistor layout, increasing its deep trench isolation enclosed area. For these transistors, Z<sub>th</sub> measurements are carried out in the frequency range 10kHz-1GHz; the results show that the metal connections configuration in the BEOL or layout modifications can considerably impact the Zth decay at low frequencies. An identical Z<sub>th</sub> trend is instead measured above 1-2 MHz, demonstrating that at higher frequencies just the region close to the heat source is concerned by dynamic thermal phenomena.
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers
dc.subject.enSiGe HBT
dc.subject.enthermal penetration depth
dc.subject.enthermal impedance
dc.subject.enBEOL metals thermal impact
dc.subject.enthermal capacitance
dc.title.enThermal Penetration Depth Analysis and Impact of the BEOL Metals on the Thermal Impedance of SiGe HBTs
dc.typeArticle de revue
dc.identifier.doi10.1109/LED.2017.2743043
dc.subject.halSciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
dc.description.sponsorshipEuropeTowARds Advanced bicmos NanoTechnology platforms for rf and thz applicatiOns
bordeaux.journalIEEE Electron Device Letters
bordeaux.page1457 - 1460
bordeaux.volume38
bordeaux.hal.laboratoriesInstitut de Mécanique et d’Ingénierie de Bordeaux (I2M) - UMR 5295*
bordeaux.issue10
bordeaux.institutionUniversité de Bordeaux
bordeaux.institutionBordeaux INP
bordeaux.institutionCNRS
bordeaux.institutionINRAE
bordeaux.institutionArts et Métiers
bordeaux.peerReviewedoui
hal.identifierhal-01639596
hal.version1
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01639596v1
bordeaux.COinSctx_ver=Z39.88-2004&amp;rft_val_fmt=info:ofi/fmt:kev:mtx:journal&amp;rft.jtitle=IEEE%20Electron%20Device%20Letters&amp;rft.date=2017-10&amp;rft.volume=38&amp;rft.issue=10&amp;rft.spage=1457%20-%201460&amp;rft.epage=1457%20-%201460&amp;rft.eissn=0741-3106&amp;rft.issn=0741-3106&amp;rft.au=D'ESPOSITO,%20Rosario&amp;BALANETHIRAM,%20Suresh&amp;BATTAGLIA,%20Jean-Luc&amp;FREGONESE,%20Sebastien&amp;ZIMMER,%20Thomas&amp;rft.genre=article


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