Recherche
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A Zero Temperature Coefficient Voltage Reference, Stability and Versatility using 28nm FD-SOI Technology
Actes de congrès/Proceedings -
Proposal and Application of Equivalent MOSFET with different temperature coefficient of threshold voltage
Actes de congrès/Proceedings -
A Walsh-based Arbitrary Waveform Generator for 5G Applications in 28nm FD-SOI CMOS Technology
Communication dans un congrès -
A (0.75-1.13)mW and (2.4-5.2)ps RMS jitter Integer-N based Dual-Loop PLL for Indoor and Outdoor Positioning in 28nm FD-SOI CMOS Technology
(IEEE Transactions on Circuits and Systems II: Express Briefs. pp. 1-1, 2023-07-05)Article de revue -
A 2.45GHz SiGe Power Amplifier with a Novel Digital Predistortion using Orthogonal Sequences
Communication dans un congrès -
A Block-based LMS using the Walsh Transform for Digital Predistortion of Power Amplifiers
(IEEE Transactions on Communications. pp. 1-1, 2023-07-13)Article de revueLibre accès -
Amplificateur de puissance SiGe en bande Ku avec puissance de sortie élevée et robustesse SWR jusqu'à 120 °C
(IEEE Transactions on Circuits and Systems I: Regular Papers. vol. 70, n° 7, pp. 1-8, 2023-05-29)Article de revue -
Redox-active ions unlock substitutional doping in halide perovskites
(Materials Horizons. vol. 10, n° 8, pp. 2845-2853, 2023-07-06)Article de revueLibre accès -
Methodology combining industry 4.0 technologies and KPI’s reliability for supply chain performance
(International Journal of Computer Integrated Manufacturing. vol. 36, n° 8, pp. 1128-1152, 2023-01-13)Article de revueLibre accès -
A Proof-of-Concept of a Multiple-Cell Upsets Detection Method for SRAMs in Space Applications
(IEEE Transactions on Circuits and Systems I: Regular Papers. pp. 1-11, 2023-09-13)Article de revue