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dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorRAFIK, Ossama
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorCAPITAINE, Armande
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorBRIAT, Olivier
IDREF: 069133980
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorVINASSA, Jean-Michel
IDREF: 078898064
dc.date.accessioned2025-09-22T09:06:28Z
dc.date.available2025-09-22T09:06:28Z
dc.date.issued2025-08
dc.identifier.issn0026-2714en_US
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/207650
dc.description.abstractEnThis paper presents a comparison on cycling strategies conducted on an experimental study on an NMC lithium-ion battery. The investigation focused on examining the capacity degradation on batteries subjected to two cycling protocols, conducted at an ambient temperature of 0 °C and stress factors that depend on actual capacity instead of nominal capacity. The capacity losses were evaluated post-cycling, revealing a degradation of 28.63 % and 25.5 % for cells subjected to Protocol 1, whereas cells cycled under Protocol 2 exhibited lower capacity losses of 21.58 % and 20.73 %.This paper also presents the impact of the discharging current and the depth of discharge on capacity utilization to support the development of optimized cycling protocols for practical applications.
dc.language.isoENen_US
dc.rightsAttribution 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/us/*
dc.subject.enLithium-ion battery
dc.subject.enCycling at low temperature
dc.subject.enLithium plating
dc.subject.enLow-temperature performance
dc.subject.enIso-stress
dc.title.enPerformance characterization of lithium-ion battery and aging under constant stress conditions at low temperature
dc.typeArticle de revueen_US
dc.identifier.doi10.1016/j.microrel.2025.115785en_US
dc.subject.halSciences de l'ingénieur [physics]en_US
bordeaux.journalMicroelectronics Reliabilityen_US
bordeaux.page115785en_US
bordeaux.volume171en_US
bordeaux.hal.laboratoriesIMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.teamRELIABILITY - RESSen_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
bordeaux.import.sourcecrossref
hal.identifierhal-05272096
hal.version1
hal.date.transferred2025-09-22T09:06:30Z
hal.popularnonen_US
hal.audienceInternationaleen_US
hal.exporttrue
workflow.import.sourcecrossref
dc.rights.ccCC BYen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Microelectronics%20Reliability&rft.date=2025-08&rft.volume=171&rft.spage=115785&rft.epage=115785&rft.eissn=0026-2714&rft.issn=0026-2714&rft.au=RAFIK,%20Ossama&CAPITAINE,%20Armande&BRIAT,%20Olivier&VINASSA,%20Jean-Michel&rft.genre=article


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