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dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorYANG, Yang
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorDEJOUS, Corinne
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorHALLIL, Hamida
dc.date.accessioned2024-05-21T08:34:45Z
dc.date.available2024-05-21T08:34:45Z
dc.date.issued2022-10
dc.date.conference2022-10-24
dc.identifier.issn2473-2001en_US
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/199946
dc.description.abstractEnIn recent decades, the rapid development of wireless communication technologies has led to the fast development of other fields, and radio frequency (RF) front-end devices become of particular importance for the fifth-generation (5G) telecommunication system. In this context, the film bulk acoustic resonator (FBAR), with an operating frequency up to 10 GHz and miniaturized size, is therefore becoming in great demand to satisfy the emerging research and industry needs. In this work, the design of a tunable FBAR is performed and analysed by finite element method (FEM) at microwave frequency range. The FBAR tunability is realised by applying different mechanical loads and its equivalent circuit was studied by using a Butterworth-Van Dyke (BVD) model, this work gives a deeper understanding and analysis on the physical origin of FBAR's tunability and can therefore give some strategy and methodology support for the design of such devices.
dc.language.isoENen_US
dc.subjectRadio frequency
dc.subjectWireless communication
dc.subjectAnalytical mode
dc.subjectResonant frequency
dc.subjectFinite element analysis
dc.subjectFilm bulk acoustic resonators
dc.subjectIntegrated circuit modeling
dc.subjectRF front-end devices
dc.subjectEquivalent electrical circuit
dc.subjectSolidly Mounted Resonator (SMR)
dc.subjectTunable
dc.subjectFBAR
dc.subjectPiezoelectric transducers
dc.title.enFinite element method and equivalent circuit analysis of tunable FBAR resonators
dc.typeCommunication dans un congrèsen_US
dc.identifier.doi10.1109/ICECS202256217.2022.9970945en_US
dc.subject.halSciences de l'ingénieur [physics]en_US
bordeaux.page1-4en_US
bordeaux.hal.laboratoriesIMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.conference.title2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)en_US
bordeaux.countrygben_US
bordeaux.title.proceeding2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)en_US
bordeaux.teamWAVES-MDAen_US
bordeaux.conference.cityGlasgowen_US
hal.invitedouien_US
hal.proceedingsouien_US
hal.conference.end2022-10-26
hal.popularnonen_US
hal.audienceInternationaleen_US
hal.exportfalse
dc.rights.ccPas de Licence CCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2022-10&rft.spage=1-4&rft.epage=1-4&rft.eissn=2473-2001&rft.issn=2473-2001&rft.au=YANG,%20Yang&DEJOUS,%20Corinne&HALLIL,%20Hamida&rft.genre=unknown


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