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Influence of Si4+ and Ga3+ doped in the BiSiGaVOx system on the structure and ionic conductivity

hal.structure.identifierUniversité Cadi Ayyad [Marrakech] [UCA]
dc.contributor.authorAGNAOU, Abdelmajid
hal.structure.identifierUniversité Cadi Ayyad [Marrakech] [UCA]
dc.contributor.authorMHAIRA, Wafaa
hal.structure.identifierUniversité Cadi Ayyad [Marrakech] [UCA]
dc.contributor.authorESSALIM, Rachida
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMAUVY, Fabrice
hal.structure.identifierUniversité Cadi Ayyad [Marrakech] [UCA]
dc.contributor.authorALGA, Maati
hal.structure.identifierUniversité Cadi Ayyad [Marrakech] [UCA]
dc.contributor.authorZAMAMA, Mohamed
hal.structure.identifierUniversité Cadi Ayyad [Marrakech] [UCA]
dc.contributor.authorAMMAR, Abdelaziz
dc.date.accessioned2024-02-24T03:13:04Z
dc.date.available2024-02-24T03:13:04Z
dc.date.issued2024
dc.identifier.issn1876-990X
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/188344
dc.description.abstractEnIn the present work, the Si and Ga co-doped the Bi4V2O11 compound, i.e., the Bi4V2-xGax/2Six/2O11-3x/4 system (0.1 ≤ x ≤ 0.9) was studied. Structural analysis by XRD reveals that the ordered α-monoclinic phase is synthesized for x ≤ 0.1. The less ordered β-orthorhombic phase was observed in the compositional range of 0.2 ≤ x ≤ 0.3, while the disordered γ-tetragonal phase was obtained over a wide compositional range of 0.4 ≤ x ≤ 0.8. The conductivity of the solid solution Bi4V2-xGax/2Six/2O11-3x/4, with x = 0.2, is promising at 500°C, reaching 1.1 × 10–1 S.cm−1.
dc.language.isoen
dc.publisherSpringer
dc.subject.enSolid solution
dc.subject.enBiCuSbVOx
dc.subject.enXRD
dc.subject.enFT-IR
dc.subject.enOptical properties
dc.subject.enIonic conductivity
dc.subject.enBiSiGaVOx XRD FTIR ionic conductivity
dc.subject.enBiSiGaVOx
dc.subject.enFTIR
dc.subject.enionic conductivity
dc.title.enInfluence of Si4+ and Ga3+ doped in the BiSiGaVOx system on the structure and ionic conductivity
dc.typeArticle de revue
dc.identifier.doi10.1007/s12633-023-02759-y
dc.subject.halChimie/Matériaux
dc.subject.halChimie/Chimie inorganique
bordeaux.journalSilicon
bordeaux.page1283-1290
bordeaux.volume16
bordeaux.hal.laboratoriesInstitut de Chimie de la Matière Condensée de Bordeaux (ICMCB) - UMR 5026*
bordeaux.issue3
bordeaux.institutionUniversité de Bordeaux
bordeaux.institutionBordeaux INP
bordeaux.institutionCNRS
bordeaux.peerReviewedoui
hal.identifierhal-04475607
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-04475607v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Silicon&rft.date=2024&rft.volume=16&rft.issue=3&rft.spage=1283-1290&rft.epage=1283-1290&rft.eissn=1876-990X&rft.issn=1876-990X&rft.au=AGNAOU,%20Abdelmajid&MHAIRA,%20Wafaa&ESSALIM,%20Rachida&MAUVY,%20Fabrice&ALGA,%20Maati&rft.genre=article


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