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dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorLHOMEL, Antoine
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorRIVET, François
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorDELTIMPLE, Nathalie
IDREF: 102460280
dc.date.accessioned2024-02-06T09:12:51Z
dc.date.available2024-02-06T09:12:51Z
dc.date.issued2023-12-28
dc.identifier.urioai:crossref.org:10.29292/jics.v18i3.795
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/187874
dc.description.abstractEnTo achieve ultra-high-speed wireless communications, millimeter-wave bands have emerged as bands of interest for these new applications. However, a technological breakthrough linked to power amplifiers has appeared. Indeed, working near the maximum oscillation frequency of the transistor leads to low intrinsic gain and poor efficiency for these devices. This paper presents an overview of sub-terahertz CMOS power amplifiers with a focus on gain enhancement techniques. The paper will also feature state-of-the-art D-Band CMOS power amplifier architectures. The goal is to present how the gain enhancement techniques are used in a complete architecture. Based on the three techniques and the state-of-the-art presented in the paper, a focus on three architectures is proposed. The aim is to highlight the benefits of each method in the design. The final part summarizes the paper and opens up future perspectives and trends identified through the paper.
dc.language.isoENen_US
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/us/*
dc.sourcecrossref
dc.subjectD-Band
dc.subjectCMOS Power Amplifier (PA)
dc.subjectSub-terahertz (sub-THz)
dc.subjectUnilateral power gain (U)
dc.subjectGain-boosting
dc.title.enD-Band CMOS Power Amplifiers: Challenges, State-of-the-Art, Technological Limitations and Trends
dc.typeArticle de revueen_US
dc.identifier.doi10.29292/jics.v18i3.795en_US
dc.subject.halSciences de l'ingénieur [physics]
bordeaux.journalJournal of Integrated Circuits and Systems,en_US
bordeaux.page1-10en_US
bordeaux.volume18en_US
bordeaux.hal.laboratoriesIMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218en_US
bordeaux.issue3en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.teamCIRCUIT DESIGNen_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
bordeaux.import.sourcedissemin
hal.identifierhal-04457532
hal.version1
hal.date.transferred2024-02-14T13:09:40Z
hal.popularnonen_US
hal.audienceInternationaleen_US
hal.exporttrue
workflow.import.sourcedissemin
dc.rights.ccCC BY-NC-NDen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal%20of%20Integrated%20Circuits%20and%20Systems,&rft.date=2023-12-28&rft.volume=18&rft.issue=3&rft.spage=1-10&rft.epage=1-10&rft.au=LHOMEL,%20Antoine&RIVET,%20Fran%C3%A7ois&DELTIMPLE,%20Nathalie&rft.genre=article


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