Nitrogen radiofrequency plasma treatment of graphene
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
hal.structure.identifier | Schneider Electric [ SE] | |
dc.contributor.author | BIDENT, Antoine | |
hal.structure.identifier | Schneider Electric [ SE] | |
dc.contributor.author | CAILLAULT, Nathalie | |
hal.structure.identifier | Schneider Electric [ SE] | |
dc.contributor.author | DELANGE, Florence | |
hal.structure.identifier | Plateforme Aquitaine de Caractérisation des Matériaux [PLACAMAT] | |
dc.contributor.author | LABRUGÈRE-SARROSTE, Christine | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | AUBERT, Guillaume | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | AYMONIER, Cyril | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | DURAND, Étienne | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | DEMOURGUES, Alain | |
hal.structure.identifier | Department of Electrical and Computer Engineering | |
dc.contributor.author | LU, Yongfeng | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
hal.structure.identifier | Department of Electrical and Computer Engineering | |
dc.contributor.author | SILVAIN, Jean‐françois | |
dc.date.issued | 2023-11-02 | |
dc.identifier.issn | 2365-6549 | |
dc.description.abstractEn | The incorporation of nitrogen (N) atoms into a graphitic network such as graphene (Gr) remains a major challenge. However, even if the insertion mechanisms are not yet fully understood, it is certain that the modification of the electrical properties of Gr is possible according to the configuration adopted. Several simulations work, notably using DFT, have shown that the incorporation of N in Gr can induce an increase in the electrical conductivity and N acts as an electron donor; this increase is linked to the amount of N, the sp 2 /sp 3 carbon configuration, and the nature of CÀ N bonding. Nitrogen radio-frequency (RF) plasma has been used to incorporate N into Gr materials. The RF plasma method shows the possibility to incorporate N-graphitic nitrogen into Gr after a pre-treatment with nitric acid. X-ray photoelectron spectroscopy and Raman spectrometry were used to quantify the functionalized groups. The modifications of the graphene surface chemistry along the amount of N inside the Gr change the chemical environment of N. This method, enabling the incorporation of N inside Gr matrix, opens up a route to a broad range of applications. | |
dc.language.iso | en | |
dc.publisher | Wiley | |
dc.rights.uri | http://creativecommons.org/licenses/by-nd/ | |
dc.title.en | Nitrogen radiofrequency plasma treatment of graphene | |
dc.type | Article de revue | |
dc.identifier.doi | 10.1002/slct.202303661 | |
dc.subject.hal | Chimie/Matériaux | |
bordeaux.journal | ChemistrySelect | |
bordeaux.page | e202303661 | |
bordeaux.volume | 8 | |
bordeaux.issue | 41 | |
bordeaux.peerReviewed | oui | |
hal.identifier | hal-04282184 | |
hal.version | 1 | |
hal.popular | non | |
hal.audience | Internationale | |
hal.origin.link | https://hal.archives-ouvertes.fr//hal-04282184v1 | |
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