Reliability of the hybrid bonding level using submicrometric bonding pads
dc.rights.license | open | en_US |
hal.structure.identifier | STMicroelectronics | |
dc.contributor.author | LHOSTIS, Sandrine | |
hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
hal.structure.identifier | STMicroelectronics | |
dc.contributor.author | AYOUB, Bassel | |
hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
dc.contributor.author | FREMONT, Helene
IDREF: 127007571 | |
hal.structure.identifier | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI] | |
dc.contributor.author | MOREAU, Stephane | |
hal.structure.identifier | STMicroelectronics | |
dc.contributor.author | MATTEI, Jean-Gabriel | |
dc.contributor.author | LAMONTAGNE, Patrick | |
hal.structure.identifier | STMicroelectronics | |
dc.contributor.author | TOURNIER, Arnaud | |
dc.contributor.editor | LABAT, Nathalie | |
dc.contributor.editor | NOLHIER, Nicolas | |
dc.date.accessioned | 2023-11-07T09:03:15Z | |
dc.date.available | 2023-11-07T09:03:15Z | |
dc.date.issued | 2023-11-03 | |
dc.date.conference | 2023-10-02 | |
dc.identifier.issn | 0026-2714 | en_US |
dc.identifier.uri | oai:crossref.org:10.1016/j.microrel.2023.115189 | |
dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/184654 | |
dc.description.abstract | Hybrid bonding is a major enabler for devices requiring 3D stacking with high interconnection density. An in-depth reliability study is performed for the specific Cu/SiO2 integration to identify the potential failure mechanisms. A high robustness is evidenced down to bonding pitch 0.81 μm for the standard reliability tests such as Thermal Cycling (TC) tests, High Temperature Storage (HTS) test, Stress induced Voiding (SiV), Time Dependent Dielectric Breakdown (TDDB) or electromigration. The hybrid bonding interface is stable under thermal stress with no atomic or ionic Cu diffusion observed through the hybrid bonding interface. The role of the thin self-formed cuprous oxide at the Cu/SiO2 interface in the case of misaligned bonding pads is believed to play a major role in the high robustness to reliability tests. | |
dc.language.iso | EN | en_US |
dc.publisher | Elsevier BV | en_US |
dc.source | crossref | |
dc.title.en | Reliability of the hybrid bonding level using submicrometric bonding pads | |
dc.type | Communication dans un congrès | en_US |
dc.identifier.doi | 10.1016/j.microrel.2023.115189 | en_US |
dc.subject.hal | Sciences de l'ingénieur [physics] | en_US |
bordeaux.page | 115189 | en_US |
bordeaux.volume | 150 | en_US |
bordeaux.hal.laboratories | IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218 | en_US |
bordeaux.institution | Université de Bordeaux | en_US |
bordeaux.institution | Bordeaux INP | en_US |
bordeaux.institution | CNRS | en_US |
bordeaux.conference.title | ESRF 2023 | en_US |
bordeaux.country | fr | en_US |
bordeaux.title.proceeding | Special issue of 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2023 | en_US |
bordeaux.team | RELIABILITY-RIAD,WBG | en_US |
bordeaux.team | RELIABILITY-RIAD | en_US |
bordeaux.conference.city | TOULOUSE | en_US |
bordeaux.import.source | dissemin | |
hal.identifier | hal-04273117 | |
hal.version | 1 | |
hal.date.transferred | 2023-11-10T09:26:27Z | |
hal.invited | oui | en_US |
hal.proceedings | oui | en_US |
hal.conference.end | 2023-10-05 | |
hal.popular | non | en_US |
hal.audience | Internationale | en_US |
hal.export | true | |
workflow.import.source | dissemin | |
dc.rights.cc | Pas de Licence CC | en_US |
bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2023-11-03&rft.volume=150&rft.spage=115189&rft.epage=115189&rft.eissn=0026-2714&rft.issn=0026-2714&rft.au=LHOSTIS,%20Sandrine&AYOUB,%20Bassel&FREMONT,%20Helene&MOREAU,%20Stephane&MATTEI,%20Jean-Gabriel&rft.genre=unknown |
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