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A Proof-of-Concept of a Multiple-Cell Upsets Detection Method for SRAMs in Space Applications

dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorBRENDLER, Leonardo H.
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorLAPUYADE, Herve
IDREF: 120393336
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorDEVAL, Yann
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorDARRACQ, Frederic
IDREF: 074585487
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorFAUQUET, Frederic
dc.contributor.authorREIS, Ricardo
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorRIVET, Francois
IDREF: 135485576
dc.date.accessioned2023-10-17T08:21:00Z
dc.date.available2023-10-17T08:21:00Z
dc.date.issued2023-09-13
dc.identifier.issn1549-8328en_US
dc.identifier.urioai:crossref.org:10.1109/tcsi.2023.3310876
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/184443
dc.description.abstractEnThis work details a new way to deal with the Multiple-Cell Upsets (MCU) in SRAM memories for space applications. The method consists of spatially interleaving a memory plan with a network of memory radiation detectors. As a proof-of-concept, a prototype circuit composed of the radiation detectors was manufactured in the 350 nm CMOS Process Technology and tested considering two methodologies: electrically-induced SEU/MCU testing and SEE laser testing. Silicon measurement results confirm the correct operation of the circuit, detecting single and multiple events inserted in different positions of the evaluated detection plans. According to the ratio between the number of data and detection cells, the method proposed can provide a probability of detecting MCUs in a memory plan that can reach close to 100%.
dc.language.isoENen_US
dc.sourcecrossref
dc.subjectRandom access memory
dc.subjectTransistors
dc.subjectPower demand
dc.subjectLogic gates
dc.subjectRadiation effects
dc.subjectPrototypes
dc.subjectMOS devices
dc.subject.enDetection cell
dc.subject.enMultiple-cell upsets
dc.subject.enRadiation hardening
dc.subject.enSingle-event upsets
dc.subject.enSRAM
dc.title.enA Proof-of-Concept of a Multiple-Cell Upsets Detection Method for SRAMs in Space Applications
dc.typeArticle de revueen_US
dc.identifier.doi10.1109/tcsi.2023.3310876en_US
dc.subject.halSciences de l'ingénieur [physics]en_US
bordeaux.journalIEEE Transactions on Circuits and Systems I: Regular Papersen_US
bordeaux.page1-11en_US
bordeaux.hal.laboratoriesIMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.teamCONCEPTION-CASen_US
bordeaux.teamNANOELECTRONIQUE-LASERen_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
bordeaux.import.sourcedissemin
hal.identifierhal-04245512
hal.version1
hal.date.transferred2023-10-17T08:21:01Z
hal.popularnonen_US
hal.audienceInternationaleen_US
hal.exporttrue
workflow.import.sourcedissemin
dc.rights.ccPas de Licence CCen_US
bordeaux.subtypeArticle de synthèseen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=IEEE%20Transactions%20on%20Circuits%20and%20Systems%20I:%20Regular%20Papers&rft.date=2023-09-13&rft.spage=1-11&rft.epage=1-11&rft.eissn=1549-8328&rft.issn=1549-8328&rft.au=BRENDLER,%20Leonardo%20H.&LAPUYADE,%20Herve&DEVAL,%20Yann&DARRACQ,%20Frederic&FAUQUET,%20Frederic&rft.genre=article


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