A 24.25-30.5GHz Fully Integrated SiGe Phase Shifter/VGA/Power Amplifier in 0.13μm BiCMOS Technology for 5G Beamforming Applications
| dc.rights.license | open | en_US |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | TOURISSAUD, Anais | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | KERHERVE, Eric | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | DELTIMPLE, Nathalie
IDREF: 102460280 | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | VOISIN, Steeven | |
| hal.structure.identifier | United Monolithic Semiconductors [UMS] | |
| dc.contributor.author | MATHIEU, Romain | |
| dc.date.accessioned | 2023-10-03T09:36:05Z | |
| dc.date.available | 2023-10-03T09:36:05Z | |
| dc.date.conference | 2023-08-28 | |
| dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/183865 | |
| dc.description.abstract | This paper presents a 24.25GHz to 30.5GHz wideband SiGe front-end module including a passive phase shifter (PS), a low impedance and low phase variation variable gain amplifier (VGA) and a linear power amplifier (PA) dedicated to beamforming architectures. The whole chip exhibits 33dB of maximum gain, 24dBm of saturation power (Psat) and 32.5% of maximum Power Added Efficiency (PAEmax) at 27GHz. Phase adjustment covers 360° with a minimum resolution of 5.6° and gain covers a 16dB range by 0.5dB steps. The circuit is implemented in a SiGe 130nm BiCMOS process and occupies 0.53 mm² without pads. | |
| dc.language.iso | EN | en_US |
| dc.subject | SiGe | |
| dc.subject | HBT | |
| dc.subject | Current mirror | |
| dc.subject | Phase shifter | |
| dc.subject | Variable gain amplifier | |
| dc.subject | Power amplifier | |
| dc.subject | 5G | |
| dc.subject | Beamforming | |
| dc.title.en | A 24.25-30.5GHz Fully Integrated SiGe Phase Shifter/VGA/Power Amplifier in 0.13μm BiCMOS Technology for 5G Beamforming Applications | |
| dc.type | Communication dans un congrès | en_US |
| dc.subject.hal | Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique | en_US |
| bordeaux.hal.laboratories | IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218 | en_US |
| bordeaux.institution | Université de Bordeaux | en_US |
| bordeaux.institution | Bordeaux INP | en_US |
| bordeaux.institution | CNRS | en_US |
| bordeaux.conference.title | 36th Symposium on Integrated and System Design, SBCCI2023 | en_US |
| bordeaux.country | br | en_US |
| bordeaux.team | CONCEPTION-CSH | en_US |
| bordeaux.conference.city | Rio de Janeiro | en_US |
| hal.identifier | hal-04225986 | |
| hal.version | 1 | |
| hal.date.transferred | 2023-10-03T09:36:07Z | |
| hal.invited | oui | en_US |
| hal.proceedings | oui | en_US |
| hal.conference.end | 2023-09-01 | |
| hal.popular | non | en_US |
| hal.audience | Internationale | en_US |
| hal.export | true | |
| dc.rights.cc | Pas de Licence CC | en_US |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.au=TOURISSAUD,%20Anais&KERHERVE,%20Eric&DELTIMPLE,%20Nathalie&VOISIN,%20Steeven&MATHIEU,%20Romain&rft.genre=unknown |
