Amplificateur de puissance SiGe en bande Ku avec puissance de sortie élevée et robustesse SWR jusqu'à 120 °C
| dc.rights.license | open | en_US |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | COQUILLAS, Benjamin | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | KERHERVE, Eric | |
| dc.contributor.author | AMIAUD, Anne-Charlotte | |
| dc.contributor.author | REDOIS, Samuel | |
| dc.contributor.author | ROUSSEL, Laurent | |
| dc.contributor.author | LOUIS, Bruno | |
| dc.contributor.author | MERLET, Thomas | |
| dc.contributor.author | PETIT, Vincent | |
| dc.date.accessioned | 2023-06-06T12:45:54Z | |
| dc.date.available | 2023-06-06T12:45:54Z | |
| dc.date.issued | 2023-05-29 | |
| dc.identifier.issn | 1549-8328 | en_US |
| dc.identifier.uri | oai:crossref.org:10.1109/tcsi.2023.3274496 | |
| dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/182503 | |
| dc.description.abstractEn | This paper presents a highly compact Ku band 130nm SiGe power amplifier (PA) in a double balanced architecture. A highly compact low-loss 4 to 1 combiner is associated with a cascode topology to provide a power combination up to 1W and a high resilience to the standing wave ratio (SWR) from 2:1 to 4:1. A high thermal stability up to 120 ∘ C is ensured by an advanced configuration of transistors. A choices innovative set on the cascode stage design and layout improves the control of the impact ionization and selfheating. A driver stage allows the circuit to achieve over 20 dB of linear gain. At 30 ∘ C, 18 GHz and a supply voltage (V SUPPLY) of 4.2V, this power amplifier achieves a measured saturated power (P sat) of 30 dBm for an output power at the 1dB compression point (OCP 1dB) of 28.8 dBm, a maximum power added efficiency (PAE) of 23.5% and a linear gain of 21.4 dB. The gain difference across 2:1 SWR phase variations is only 0.8 dB. The active area of the die chip is only 1.13 mm 2 . | |
| dc.language.iso | EN | en_US |
| dc.source | crossref | |
| dc.subject.en | Balanced architecture | |
| dc.subject.en | High output power | |
| dc.subject.en | Ku band | |
| dc.subject.en | K band | |
| dc.subject.en | Power amplifier | |
| dc.subject.en | SiGe | |
| dc.subject.en | SWR-resilience | |
| dc.subject.en | Thermal stability | |
| dc.subject.en | Impact ionization | |
| dc.subject.en | Selfheating | |
| dc.subject.en | Avalanche | |
| dc.subject.en | Transistors | |
| dc.subject.en | Gain | |
| dc.subject.en | Silicon germanium | |
| dc.subject.en | Power measurement | |
| dc.subject.en | Power generation | |
| dc.title | Amplificateur de puissance SiGe en bande Ku avec puissance de sortie élevée et robustesse SWR jusqu'à 120 °C | |
| dc.title.en | Ku Band SiGe Power Amplifier With High Output Power and SWR Robustness Up to 120°C | |
| dc.type | Article de revue | en_US |
| dc.identifier.doi | 10.1109/tcsi.2023.3274496 | en_US |
| dc.subject.hal | Sciences de l'ingénieur [physics] | en_US |
| bordeaux.journal | IEEE Transactions on Circuits and Systems I: Regular Papers | en_US |
| bordeaux.page | 1-8 | en_US |
| bordeaux.volume | 70 | |
| bordeaux.hal.laboratories | IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218 | en_US |
| bordeaux.issue | 7 | |
| bordeaux.institution | Université de Bordeaux | |
| bordeaux.institution | Bordeaux INP | |
| bordeaux.institution | CNRS | |
| bordeaux.peerReviewed | oui | en_US |
| bordeaux.inpress | non | en_US |
| bordeaux.import.source | dissemin | |
| hal.identifier | hal-04119191 | |
| hal.version | 1 | |
| hal.date.transferred | 2023-06-06T12:54:34Z | |
| hal.export | true | |
| workflow.import.source | dissemin | |
| dc.rights.cc | Pas de Licence CC | en_US |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.title=Amplificateur%20de%20puissance%20SiGe%20en%20bande%20Ku%20avec%20puissance%20de%20sortie%20%C3%A9lev%C3%A9e%20et%20robustesse%20SWR%20jusqu'%C3%A0%20120%20%C2%B0C&rft.atitle=Amplificateur%20de%20puissance%20SiGe%20en%20bande%20Ku%20avec%20puissance%20de%20sortie%20%C3%A9lev%C3%A9e%20et%20robustesse%20SWR%20jusqu'%C3%A0%20120%20%C2%B0C&rft.jtitle=IEEE%20Transactions%20on%20Circuits%20and%20Systems%20I:%20Regular%20Papers&rft.date=2023-05-29&rft.volume=70&rft.issue=7&rft.spage=1-8&rft.epage=1-8&rft.eissn=1549-8328&rft.issn=1549-8328&rft.au=COQUILLAS,%20Benjamin&KERHERVE,%20Eric&AMIAUD,%20Anne-Charlotte&REDOIS,%20Samuel&ROUSSEL,%20Laurent&rft.genre=article |
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