Amplificateur de puissance SiGe en bande Ku avec puissance de sortie élevée et robustesse SWR jusqu'à 120 °C
Langue
EN
Article de revue
Ce document a été publié dans
IEEE Transactions on Circuits and Systems I: Regular Papers. 2023-05-29, vol. 70, n° 7, p. 1-8
Résumé en anglais
This paper presents a highly compact Ku band 130nm SiGe power amplifier (PA) in a double balanced architecture. A highly compact low-loss 4 to 1 combiner is associated with a cascode topology to provide a power combination ...Lire la suite >
This paper presents a highly compact Ku band 130nm SiGe power amplifier (PA) in a double balanced architecture. A highly compact low-loss 4 to 1 combiner is associated with a cascode topology to provide a power combination up to 1W and a high resilience to the standing wave ratio (SWR) from 2:1 to 4:1. A high thermal stability up to 120 ∘ C is ensured by an advanced configuration of transistors. A choices innovative set on the cascode stage design and layout improves the control of the impact ionization and selfheating. A driver stage allows the circuit to achieve over 20 dB of linear gain. At 30 ∘ C, 18 GHz and a supply voltage (V SUPPLY) of 4.2V, this power amplifier achieves a measured saturated power (P sat) of 30 dBm for an output power at the 1dB compression point (OCP 1dB) of 28.8 dBm, a maximum power added efficiency (PAE) of 23.5% and a linear gain of 21.4 dB. The gain difference across 2:1 SWR phase variations is only 0.8 dB. The active area of the die chip is only 1.13 mm 2 .< Réduire
Mots clés en anglais
Balanced architecture
High output power
Ku band
K band
Power amplifier
SiGe
SWR-resilience
Thermal stability
Impact ionization
Selfheating
Avalanche
Transistors
Gain
Silicon germanium
Power measurement
Power generation
Unités de recherche