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Sub 1 μm Pitch Achievement for Cu/SiO2 Hybrid Bonding
dc.rights.license | open | en_US |
hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
hal.structure.identifier | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI] | |
hal.structure.identifier | ST Microélectronics | |
dc.contributor.author | AYOUB, Bassel | |
hal.structure.identifier | ST Microélectronics | |
dc.contributor.author | LHOSTIS, Sandrine | |
hal.structure.identifier | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI] | |
dc.contributor.author | MOREAU, Stephane | |
hal.structure.identifier | STMicroelectronics | |
dc.contributor.author | SOUCHIER, Emeline | |
hal.structure.identifier | STMicroelectronics | |
dc.contributor.author | DELOFFRE, Emilie | |
hal.structure.identifier | STMicroelectronics | |
dc.contributor.author | MERMOZ, Sebastien | |
hal.structure.identifier | STMicroelectronics | |
dc.contributor.author | CACHO, Maria Gabriela Gusmao | |
hal.structure.identifier | STMicroelectronics | |
dc.contributor.author | SZEKELY, Norah | |
hal.structure.identifier | STMicroelectronics | |
dc.contributor.author | REY, Christelle | |
hal.structure.identifier | STMicroelectronics | |
dc.contributor.author | AYBEKE, Ece | |
hal.structure.identifier | STMicroelectronics | |
dc.contributor.author | GREDY, Victor | |
hal.structure.identifier | STMicroelectronics | |
dc.contributor.author | LAMONTAGNE, Patrick | |
hal.structure.identifier | Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP] | |
dc.contributor.author | THOMAS, Olivier | |
hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
dc.contributor.author | FREMONT, Helene
IDREF: 127007571 | |
dc.date.accessioned | 2023-04-25T07:36:25Z | |
dc.date.available | 2023-04-25T07:36:25Z | |
dc.date.issued | 2023-01-18 | |
dc.date.conference | 2022-12-07 | |
dc.identifier.issn | 2473-2001 | en_US |
dc.identifier.uri | oai:crossref.org:10.1109/eptc56328.2022.10013180 | |
dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/173186 | |
dc.description.abstract | With hybrid bonding pitch reduction, many challenges are arising especially the ones related to Cu-Cu connections with submicron Cu pads. A methodology is presented here to achieve submicron hybrid bonding pitch starting from single Cu pad thermomechanical behavior study to quantifying Cu-Cu contact resistivity. Depending on the single crystal Cu orientation, several nanometers difference in total deformation is obtained. The Cu dishing limit should be restricted with respect to the lowest deformation. Contact resistivity studies allow to further refine the Cu dishing to get a contribution of contact resistivity below 10−11 Ω.cm2 . By respecting these criteria, a 100 % yield was achieved down to 0.81 µm Cu/SiO 2 hybrid bonding pitch. A successful method for the capacitance increase compensation with pitch reduction is also presented based on the adaptation of the geometric parameters of the hybrid bonding interconnects. | |
dc.language.iso | EN | en_US |
dc.publisher | IEEE | en_US |
dc.source | crossref | |
dc.subject | Contacts | |
dc.subject | Thermomechanical processes | |
dc.subject | Stability criteria | |
dc.subject | Crystals | |
dc.subject | Conductivity | |
dc.subject | Capacitance | |
dc.subject | Solids | |
dc.subject | Bonding processes | |
dc.subject | Capacitance | |
dc.subject | Copper | |
dc.subject | Crystal orientation | |
dc.subject | Deformation | |
dc.subject | Electrical resistivity | |
dc.subject | Integrated circuit reliability | |
dc.subject | Silicon compounds | |
dc.subject | Thermomechanical treatment | |
dc.title.en | Sub 1 μm Pitch Achievement for Cu/SiO2 Hybrid Bonding | |
dc.type | Communication dans un congrès avec actes | en_US |
dc.identifier.doi | 10.1109/eptc56328.2022.10013180 | en_US |
dc.subject.hal | Sciences de l'ingénieur [physics] | en_US |
bordeaux.hal.laboratories | IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218 | en_US |
bordeaux.institution | Université de Bordeaux | en_US |
bordeaux.institution | Bordeaux INP | en_US |
bordeaux.institution | CNRS | en_US |
bordeaux.conference.title | 24th Electronics Packaging Technology Conference Singapore | Dec 7-9, 2022 | en_US |
bordeaux.country | sg | en_US |
bordeaux.title.proceeding | 24th Electronics Packaging Technology Conference | en_US |
bordeaux.team | FIABILITE-PACE | en_US |
bordeaux.conference.city | Singapour | en_US |
bordeaux.peerReviewed | oui | en_US |
bordeaux.import.source | dissemin | |
hal.identifier | hal-04080577 | |
hal.version | 1 | |
hal.date.transferred | 2023-11-10T08:58:42Z | |
hal.export | true | |
workflow.import.source | dissemin | |
dc.rights.cc | Pas de Licence CC | en_US |
bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2023-01-18&rft.eissn=2473-2001&rft.issn=2473-2001&rft.au=AYOUB,%20Bassel&LHOSTIS,%20Sandrine&MOREAU,%20Stephane&SOUCHIER,%20Emeline&DELOFFRE,%20Emilie&rft.genre=proceeding |
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