S-Parameter Measurement and EM Simulation of Electronic Devices towards THz frequency range
| dc.rights.license | open | en_US |
| hal.structure.identifier | National Institute of Technology Calicut | |
| dc.contributor.author | YADAV, Chandan | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | FREGONESE, Sebastien | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | CABBIA, Marco | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | DENG, Marina
IDREF: 184622409 | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | DE MATOS, Magali | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | ZIMMER, Thomas
IDREF: 076632598 | |
| dc.date.accessioned | 2023-02-28T08:42:32Z | |
| dc.date.available | 2023-02-28T08:42:32Z | |
| dc.date.issued | 2022-09-26 | |
| dc.date.conference | 2022-03-21 | |
| dc.identifier.isbn | 978-1-6654-8566-1 | |
| dc.identifier.issn | 2158-1029, 1071-9032 | en_US |
| dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/172111 | |
| dc.description.abstractEn | In this paper, we present on-wafer S-parameter measurement of silicon-based devices up to 500 GHz and EM simulation analysis up to 750GHz. The EM simulation is carried out with RF probe models and without RF probe model (intrinsic EM simulation) up to 750 GHz. To understand difference between EM simulation predictions with and without RF probe model in frequency range 500-750 GHz, electric field distributions in the DUTs are analysed. | |
| dc.language.iso | EN | en_US |
| dc.publisher | IEEE | en_US |
| dc.rights.uri | http://hal.archives-ouvertes.fr/licences/copyright/ | |
| dc.subject.en | Calibration kit Design | |
| dc.subject.en | On-wafer S-parameter Measurement | |
| dc.subject.en | TRL | |
| dc.subject.en | Sub-THz | |
| dc.subject.en | THz | |
| dc.subject.en | EM Simulation | |
| dc.subject.en | Electronic Devices | |
| dc.title.en | S-Parameter Measurement and EM Simulation of Electronic Devices towards THz frequency range | |
| dc.type | Communication dans un congrès avec actes | en_US |
| dc.identifier.doi | 10.1109/ICMTS50340.2022.9898233 | en_US |
| dc.subject.hal | Sciences de l'ingénieur [physics]/Electronique | en_US |
| bordeaux.hal.laboratories | IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218 | en_US |
| bordeaux.institution | Université de Bordeaux | en_US |
| bordeaux.institution | Bordeaux INP | en_US |
| bordeaux.institution | CNRS | en_US |
| bordeaux.conference.title | 2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS 2022) | en_US |
| bordeaux.country | us | en_US |
| bordeaux.title.proceeding | 2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS 2022) | en_US |
| bordeaux.conference.city | Cleveland, OH | en_US |
| bordeaux.peerReviewed | oui | en_US |
| bordeaux.import.source | hal | |
| hal.identifier | hal-03856275 | |
| hal.version | 1 | |
| hal.export | false | |
| workflow.import.source | hal | |
| dc.rights.cc | Pas de Licence CC | en_US |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2022-09-26&rft.eissn=2158-1029,%201071-9032&rft.issn=2158-1029,%201071-9032&rft.au=YADAV,%20Chandan&FREGONESE,%20Sebastien&CABBIA,%20Marco&DENG,%20Marina&DE%20MATOS,%20Magali&rft.isbn=978-1-6654-8566-1&rft.genre=proceeding |
