S-Parameter Measurement and EM Simulation of Electronic Devices towards THz frequency range
Language
EN
Communication dans un congrès avec actes
This item was published in
2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS 2022), 2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS 2022), 2022-03-21, Cleveland, OH. 2022-09-26
IEEE
English Abstract
In this paper, we present on-wafer S-parameter measurement of silicon-based devices up to 500 GHz and EM simulation analysis up to 750GHz. The EM simulation is carried out with RF probe models and without RF probe model ...Read more >
In this paper, we present on-wafer S-parameter measurement of silicon-based devices up to 500 GHz and EM simulation analysis up to 750GHz. The EM simulation is carried out with RF probe models and without RF probe model (intrinsic EM simulation) up to 750 GHz. To understand difference between EM simulation predictions with and without RF probe model in frequency range 500-750 GHz, electric field distributions in the DUTs are analysed.Read less <
English Keywords
Calibration kit Design
On-wafer S-parameter Measurement
TRL
Sub-THz
THz
EM Simulation
Electronic Devices