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dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorREVEIL, Lucas
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorMUKHERJEE, Chhandak
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorMANEUX, Cristell
IDREF: 135213584
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorDENG, Marina
IDREF: 184622409
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorMARC, Francois
IDREF: 158656628
dc.contributor.authorKUMAR, Abhishek
dc.contributor.authorLARRIEU, Guilhem
dc.contributor.authorPOITTEVIN, Arnaud
dc.contributor.authorO'CONNOR, Ian
dc.contributor.authorBAUMGARTNER, Oskar
dc.contributor.authorPIRKER, David
dc.date.accessioned2023-02-03T15:28:19Z
dc.date.available2023-02-03T15:28:19Z
dc.date.issued2022-11-08
dc.date.conference2022-10-03
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/171866
dc.description.abstractEnVertical Nanowire Junction-less Transistors (VN-WFET) are a promising technology for designing energy-efficient neural networks. This work presents the first results for 3D VNWFET logic cell design taking into account the influence of intra-cell parasitic interconnects on circuit performances. The proposed methodology is used to investigate the performance of a CMOS inverter through co-simulation of the VNWFET SPICE compact model coupled with the circuit parasitic netlist extracted from 3D TCAD simulations using a standard circuit simulator.
dc.description.sponsorshipPortes logiques élémentaires empillées - ANR-18-CE24-0005en_US
dc.language.isoENen_US
dc.publisherIEEEen_US
dc.subject.enSemiconductor device modeling
dc.subject.enSolid modeling
dc.subject.enThree-dimensional displays
dc.subject.enIntegrated circuit interconnections
dc.subject.enVery large scale integration
dc.subject.enSPICE
dc.subject.enInverters
dc.subject.enJunction-less nanowire transistors
dc.subject.en3D logic cells
dc.subject.enCompact model
dc.subject.enTCAD simulation
dc.subject.enParasitic interconnects
dc.title.enAnalysis of an Inverter Logic Cell based on 3D Vertical NanoWire Junction-Less Transistors
dc.typeCommunication dans un congrès avec actesen_US
dc.identifier.doi10.1109/VLSI-SoC54400.2022.9939576en_US
dc.subject.halSciences de l'ingénieur [physics]en_US
dc.subject.halSciences de l'ingénieur [physics]/Electroniqueen_US
bordeaux.hal.laboratoriesIMS : Laboratoire d’Intégration du Matériau au Système - UMR 5218en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.conference.title30th IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SOC 2022)en_US
bordeaux.countrygren_US
bordeaux.title.proceeding30th IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SOC 2022)en_US
bordeaux.conference.cityPatrasen_US
bordeaux.peerReviewedouien_US
bordeaux.import.sourcehal
hal.identifierhal-03765079
hal.version1
hal.exportfalse
workflow.import.sourcehal
dc.rights.ccPas de Licence CCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2022-11-08&rft.au=REVEIL,%20Lucas&MUKHERJEE,%20Chhandak&MANEUX,%20Cristell&DENG,%20Marina&MARC,%20Francois&rft.genre=proceeding


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