Afficher la notice abrégée

Emission characteristics of ion-irradiated In0.53Ga0.47As based photoconductive antennas excited at 1.55 µm

hal.structure.identifierInstitut d'électronique fondamentale [IEF]
dc.contributor.authorMANGENEY, Juliette
hal.structure.identifierInstitut d'électronique fondamentale [IEF]
dc.contributor.authorCHIMOT, Nicolas
hal.structure.identifierInstitut d'électronique fondamentale [IEF]
dc.contributor.authorMEIGNIEN, L.
hal.structure.identifierInstitut d'électronique fondamentale [IEF]
dc.contributor.authorZEROUNIAN, Nicolas
hal.structure.identifierInstitut d'électronique fondamentale [IEF]
dc.contributor.authorCROZAT, Paul
hal.structure.identifierInstitut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dc.contributor.authorBLARY, Karine
hal.structure.identifierInstitut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dc.contributor.authorLAMPIN, Jean-Francois
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorMOUNAIX, Patrick
dc.date.issued2007
dc.identifier.issn1094-4087
dc.description.abstractEnWe present a detailed study of the effect of the carrier lifetime on the terahertz signal characteristics emitted by Br+-irradiated In0.53Ga0.47As photoconductive antennas excited by 1550 nm wavelength femtosecond optical pulses. The temporal waveforms and the average radiated powers for various carrier lifetimes are experimentally analyzed and compared to predictions of analytical models of charge transport. Improvements in bandwidth and in average power of the emitted terahertz radiation are observed with the decrease of the carrier lifetime on the emitter. The power radiated by ion-irradiated In0.53Ga0.47As photoconductive antennas excited by 1550 nm wavelength optical pulses is measured to be 0.8 μW. This value is comparable with or greater than that emitted by similar low temperature grown GaAs photoconductive antennas excited by 780 nm wavelength optical pulses.
dc.language.isoen
dc.publisherOptical Society of America - OSA Publishing
dc.title.enEmission characteristics of ion-irradiated In0.53Ga0.47As based photoconductive antennas excited at 1.55 µm
dc.typeArticle de revue
dc.identifier.doi10.1364/OE.15.008943
dc.subject.halSciences de l'ingénieur [physics]
bordeaux.journalOptics Express
bordeaux.page8943-8950
bordeaux.volume15
bordeaux.peerReviewedoui
hal.identifierhal-00283049
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00283049v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Optics%20Express&rft.date=2007&rft.volume=15&rft.spage=8943-8950&rft.epage=8943-8950&rft.eissn=1094-4087&rft.issn=1094-4087&rft.au=MANGENEY,%20Juliette&CHIMOT,%20Nicolas&MEIGNIEN,%20L.&ZEROUNIAN,%20Nicolas&CROZAT,%20Paul&rft.genre=article


Fichier(s) constituant ce document

FichiersTailleFormatVue

Il n'y a pas de fichiers associés à ce document.

Ce document figure dans la(les) collection(s) suivante(s)

Afficher la notice abrégée