MANGENEY, Juliette; CHIMOT, Nicolas; MEIGNIEN, L.; ZEROUNIAN, Nicolas; CROZAT, Paul; BLARY, Karine; LAMPIN, Jean-Francois; MOUNAIX, Patrick

doi:10.1364/OE.15.008943

Metadatos

Mostrar el registro completo del ítem

Licencia de uso del documento

MANGENEY, Juliette
Institut d'électronique fondamentale [IEF]

CHIMOT, Nicolas
Institut d'électronique fondamentale [IEF]

MEIGNIEN, L.
Institut d'électronique fondamentale [IEF]

Idioma

Article de revue

Este ítem está publicado en

Optics Express. 2007, vol. 15, p. 8943-8950

Optical Society of America - OSA Publishing

Resumen en inglés

We present a detailed study of the effect of the carrier lifetime on the terahertz signal characteristics emitted by Br+-irradiated In0.53Ga0.47As photoconductive antennas excited by 1550 nm wavelength femtosecond optical pulses. The temporal waveforms and the average radiated powers for various carrier lifetimes are experimentally analyzed and compared to predictions of analytical models of charge transport. Improvements in bandwidth and in average power of the emitted terahertz radiation are observed with the decrease of the carrier lifetime on the emitter. The power radiated by ion-irradiated In0.53Ga0.47As photoconductive antennas excited by 1550 nm wavelength optical pulses is measured to be 0.8 μW. This value is comparable with or greater than that emitted by similar low temperature grown GaAs photoconductive antennas excited by 780 nm wavelength optical pulses.< Leer menos

Metadatos

Licencia de uso del documento

Emission characteristics of ion-irradiated In0.53Ga0.47As based photoconductive antennas excited at 1.55 µm

Idioma

Este ítem está publicado en

Resumen en inglés

DOI

Orígen

Centros de investigación