Show simple item record

Ultrafast stimulated emission due to quasidirect transitions in silicon nanocrystals

hal.structure.identifierInstitute of Physics
hal.structure.identifierFaculty of Mathematics and Physics [Praha/Prague]
dc.contributor.authorZIDEK, K.
hal.structure.identifierInstitute of Physics
dc.contributor.authorPELANT, Ivan
hal.structure.identifierFaculty of Mathematics and Physics [Praha/Prague]
dc.contributor.authorTROJANEK, F.
hal.structure.identifierFaculty of Mathematics and Physics [Praha/Prague]
dc.contributor.authorMALY, P.
hal.structure.identifierInstitut de Physique et Chimie des Matériaux de Strasbourg [IPCMS]
dc.contributor.authorGILLIOT, Pierre
hal.structure.identifierInstitut de Physique et Chimie des Matériaux de Strasbourg [IPCMS]
dc.contributor.authorHÖNERLAGE, Bernd
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorOBERLE, Jean
hal.structure.identifierSchool of Chemical Engineering and Advanced Materials
dc.contributor.authorSILLER, L.
hal.structure.identifierSchool of Chemical Engineering and Advanced Materials
dc.contributor.authorLITTLE, R.
hal.structure.identifierSchool of Chemistry [Newcastle]
dc.contributor.authorHORROCKS, B. R.
dc.date.created2011-03-17
dc.date.issued2011-08-29
dc.identifier.issn1098-0121
dc.description.abstractEnWe report on a detailed study of ultrafast stimulated emission arising from efficient quasidirect transitions in silicon nanocrystals under femtosecond pumping. In nanometer-sized silicon nanocrystals, the quasidirect transitions are rapidly cut off (on subpicosecond time scale) owing to surface trapping of carriers. Consequently, also the core-related radiative recombination undergoes ultrafast decay. We propose, theoretically describe, and experimentally demonstrate an extension of the commonly used variable stripe length (VSL) method, which enables us to measure transient stimulated emission even on the subpicosecond time scale. The extension consist in introducing a step-like or gradual pump pulse delay along the stripe length. By applying the extended VSL method in combination with the shifting excitation spot technique, we reveal the presence of room-temperature transient optical gain in silicon nanocrystals (lifetime <1 ps) at wavelengths ∼590 nm with peak values of the order of 100 cm−1. Finally, on the basis of our results we discuss possible ways of obtaining a laser source based on silicon nanocrystals.
dc.language.isoen
dc.publisherAmerican Physical Society
dc.title.enUltrafast stimulated emission due to quasidirect transitions in silicon nanocrystals
dc.typeArticle de revue
dc.identifier.doi10.1103/PhysRevB.84.085321
dc.subject.halPhysique [physics]/Physique [physics]/Optique [physics.optics]
bordeaux.journalPhysical Review B: Condensed Matter and Materials Physics (1998-2015)
bordeaux.page085321 (1-9)
bordeaux.volume84
bordeaux.issue8
bordeaux.peerReviewedoui
hal.identifierhal-00618042
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00618042v1
bordeaux.COinSctx_ver=Z39.88-2004&amp;rft_val_fmt=info:ofi/fmt:kev:mtx:journal&amp;rft.jtitle=Physical%20Review%20B:%20Condensed%20Matter%20and%20Materials%20Physics%20(1998-2015)&amp;rft.date=2011-08-29&amp;rft.volume=84&amp;rft.issue=8&amp;rft.spage=085321%20(1-9)&amp;rft.epage=085321%20(1-9)&amp;rft.eissn=1098-0121&amp;rft.issn=1098-0121&amp;rft.au=ZIDEK,%20K.&amp;PELANT,%20Ivan&amp;TROJANEK,%20F.&amp;MALY,%20P.&amp;GILLIOT,%20Pierre&amp;rft.genre=article


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record