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hal.structure.identifierIndian Institute of Science [Bangalore] [IISc Bangalore]
dc.contributor.authorRAO, K. J.
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPECQUENARD, Brigitte
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorGIES, Astrid
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorLEVASSEUR, Alain
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorETOURNEAU, Jean
dc.date.issued2006
dc.identifier.issn0250-4707
dc.description.abstractEnStructural and electrochemical aspects of vanadium oxide films recently reported from ICMCB/ENSCPB have been examined using appropriate structural models. It is shown that amorphous films are nonstoichiometric as a result of pre-deposition decomposition of V2O5. It is proposed that the structure of amorphous films corresponds to a nanotextured mosaic of V2O5 and V2O4 regions. Lithium intercalation into these regions is considered to occur sequentially and determined by differences in group electronegativities. Open circuit voltages (OCV) have been calculated for various stoichiometric levels of lithiation using available thermodynamic data with approximate corrections. Sequestration of lithium observed in experiments is shown to be an interfacial phenomenon. X-ray photoelectron spectroscopic observation of the formation of V3+ even when V5+ has not been completely reduced to V4+ is shown to be entirely consistent with the proposed structural model and a consequence of initial oxygen nonstoichiometry. Based on the structural data available on V2O5 and its lithiated products, it is argued that the geometry of VOn polyhedron changes from square pyramid to trigonal bipyramid to octahedron with increase of lithiation. A molecular orbital based energy band diagram is presented which suggests that lithiated vanadium oxides, LixV2O5, become metallic for high values of x.
dc.language.isoen
dc.publisherIndian Academy of Sciences
dc.subject.enAmorphous films
dc.subject.enVanadium oxide
dc.subject.enFilms
dc.subject.enStructural properties
dc.subject.enElectrochemical properties
dc.title.enStructural and electrochemical behaviour of sputtered vanadium oxide films : oxygen non-stoichiometry and lithium ion sequestration
dc.typeArticle de revue
dc.identifier.doi10.1007/BF02914086
dc.subject.halChimie/Matériaux
bordeaux.journalBulletin of Materials Science
bordeaux.page535-546
bordeaux.volume29
bordeaux.issue5
bordeaux.peerReviewedoui
hal.identifierhal-00114517
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00114517v1
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