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hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorMOUNAIX, Patrick
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorTONDUSSON, Marc
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorSARGER, Laurent
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMICHAU, Dominique
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorREYMOND, Vincent
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMAGLIONE, Mario
dc.date.issued2005
dc.description.abstractEnWe have measured the dielectric properties of BaTiO3–SrTiO3 thin films, deposited on fused silica substrates, in the MHz and THz frequency regions. Different experimental Chemical Vapor Deposition parameters were analyzed to improve dielectric properties of these thin films. In particular, we clarify pressure and oxygen percentages during the deposition of the thin layer. The complex permittivity function of the film was accurately determined between 100 GHz and 1 THz. We show that the real part of the dielectric behavior at very high frequencies follows the same tendency of the low frequency dielectric behavior also measured. These results are correlated to X-ray diffraction and RBS patterns, which show that the cationic ratio (Ba+Sr)/Ti increases from about 0.6 to 0.9 as sputtering pressure changes from 1 to 5 Pa, leading to better dielectric properties.
dc.language.isoen
dc.subject.enFar-infrared spectroscopy
dc.subject.enFerroelectrics
dc.subject.enThin Films
dc.subject.enBaTiO3
dc.subject.enSrTiO3
dc.subject.enInorganic compounds
dc.subject.enX-ray diffraction
dc.subject.enDielectrics
dc.subject.enHigh frequency
dc.title.enHigh-Frequency response in ferroelectric BaSrTiO3 thin films studied by terahertz time-domain spectroscopy
dc.typeArticle de revue
dc.identifier.doi10.1143/JJAP.44.5058
dc.subject.halChimie/Matériaux
bordeaux.journalJapanese Journal of Applied Physics, part 1 : Regular papers, Short Notes
bordeaux.pagep. 5058-5061
bordeaux.volume44
bordeaux.issue7A
bordeaux.peerReviewedoui
hal.identifierhal-00118319
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00118319v1
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