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hal.structure.identifierInstitute of Materials Science
dc.contributor.authorSCHAFRANEK, R.
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPAYAN, Sandrine
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMAGLIONE, Mario
hal.structure.identifierInstitute of Materials Science
dc.contributor.authorKLEIN, Andréas
dc.date.issued2008
dc.identifier.issn1098-0121
dc.description.abstractEnThe interface formation of Nb-doped SrTiO3 single crystals and (Ba,Sr)TiO3 thin films with Pt has been studied by using photoelectron spectroscopy with in situ sample preparation. For the single crystal sample, a Schottky barrier height for electrons of 0.5–0.6 eV is determined after deposition of Pt in vacuum environment. After annealing in 0.05 Pa oxygen pressure, a strong increase in the barrier height to >=1.2 eV is observed. X-ray induced photovoltages of up to 0.7 eV are observed in this case and have to be taken into account for a proper determination of the barrier height. A subsequent annealing in vacuum reduces the barrier again. Hence, the barrier height can be reversibly switched between an oxidized state with a large barrier height and a reduced state with a low barrier height. Quantitative analysis of the barrier heights indicates that the changes are related to the changes of interfacial defect concentration. Due to the occurrence of a Ti3+ related signal, the defects are identified as oxygen vacancies. The same effects are observed at interfaces between Pt and (Ba,Sr)TiO3 thin films with a smaller absolute value of the barrier height in the oxidized state of ~1 eV. Deposition of (Ba,Sr)TiO3 onto a metallic Pt substrate also results in a barrier height of 1.0 eV.
dc.language.isoen
dc.publisherAmerican Physical Society
dc.subject.enPhotoelectron spectroscopy
dc.subject.enThin films
dc.subject.enInterface
dc.subject.enSrTiO3
dc.subject.enSingle crystal
dc.subject.enTiO3
dc.subject.enBa
dc.subject.enSr
dc.title.enBarrier height at (Ba,Sr)TiO3/Pt interfaces studied by photoemission
dc.typeArticle de revue
dc.identifier.doi10.1103/PhysRevB.77.195310
dc.subject.halChimie/Matériaux
bordeaux.journalPhysical Review B: Condensed Matter and Materials Physics (1998-2015)
bordeaux.page195310 (13 p.)
bordeaux.volume77
bordeaux.issue19
bordeaux.peerReviewedoui
hal.identifierhal-00279962
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00279962v1
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