Behavior of silicon carbide materials under dry to hydrothermal conditions
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | BISCAY, Nicolas | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | HENRY, Lucile | |
hal.structure.identifier | WPI Advanced Institute for Materials Research [WPI-AIMR] | |
dc.contributor.author | ADSCHIRI, Tadafumi | |
hal.structure.identifier | Department of Materials Science and Engineering | |
dc.contributor.author | YOSHIMURA, Masahiro | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | AYMONIER, Cyril | |
dc.date.issued | 2021 | |
dc.identifier.issn | 2079-4991 | |
dc.description.abstractEn | Silicon carbide materials are excellent candidates for high-performance applications due to their outstanding thermomechanical properties and their strong corrosion resistance. SiC materials can be processed in various forms, from nanomaterials to continuous fibers. Common applications of SiC materials include the aerospace and nuclear fields, where the material is used in severely oxidative environments. Therefore, it is important to understand the kinetics of SiC oxidation and the parameters influencing them. The first part of this review focuses on the oxidation of SiC in dry air according to the Deal and Grove model showing that the oxidation behavior of SiC depends on the temperature and the time of oxidation. The oxidation rate can also be accelerated with the presence of H2O in the system due to its diffusion through the oxide scales. Therefore, wet oxidation is studied in the second part. The third part details the effect of hydrothermal media on the SiC materials that has been explained by different models, namely Yoshimura (1986), Hirayama (1989) and Allongue (1992). The last part of this review focuses on the hydrothermal corrosion of SiC materials from an application point of view and determine whether it is beneficial (manufacturing of materials) or detrimental (use of SiC in latest nuclear reactors). | |
dc.language.iso | en | |
dc.publisher | MDPI | |
dc.subject.en | silicon carbide | |
dc.subject.en | wet oxidation | |
dc.subject.en | supercritical fluids | |
dc.subject.en | supercritical water oxidation | |
dc.subject.en | hydrothermal corrosion | |
dc.subject.en | nanocarbon films | |
dc.title.en | Behavior of silicon carbide materials under dry to hydrothermal conditions | |
dc.type | Article de revue | |
dc.identifier.doi | 10.3390/nano11051351 | |
dc.subject.hal | Chimie/Matériaux | |
bordeaux.journal | Nanomaterials | |
bordeaux.page | 1351 | |
bordeaux.volume | 11 | |
bordeaux.issue | 5 | |
bordeaux.peerReviewed | oui | |
hal.identifier | hal-03256894 | |
hal.version | 1 | |
hal.popular | non | |
hal.audience | Internationale | |
hal.origin.link | https://hal.archives-ouvertes.fr//hal-03256894v1 | |
bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Nanomaterials&rft.date=2021&rft.volume=11&rft.issue=5&rft.spage=1351&rft.epage=1351&rft.eissn=2079-4991&rft.issn=2079-4991&rft.au=BISCAY,%20Nicolas&HENRY,%20Lucile&ADSCHIRI,%20Tadafumi&YOSHIMURA,%20Masahiro&AYMONIER,%20Cyril&rft.genre=article |
Fichier(s) constituant ce document
Fichiers | Taille | Format | Vue |
---|---|---|---|
Il n'y a pas de fichiers associés à ce document. |