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Hydrothermal growth and structural studies of Si1-xGexO2 single crystals

hal.structure.identifierInstitut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier [ICGM ICMMM]
dc.contributor.authorRANIERI, Vincent
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorDARRACQ, Stéphane
hal.structure.identifierInstitut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier [ICGM ICMMM]
dc.contributor.authorCAMBON, Martine
hal.structure.identifierInstitut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier [ICGM ICMMM]
dc.contributor.authorHAINES, Julien
hal.structure.identifierInstitut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier [ICGM ICMMM]
dc.contributor.authorCAMBON, Olivier
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorLARGETEAU, Alain
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorDEMAZEAU, Gérard
dc.date.created2011-02-18
dc.date.issued2011
dc.identifier.issn0020-1669
dc.description.abstractEnThe substitution of germanium in the α-quartz structure is a method investigated to improve the piezoelectric properties and the thermal stability of α-quartz. Growth of α-quartz type Si(1-x)Ge(x)O(2) single crystals was performed using a temperature gradient hydrothermal method under different experimental conditions (pressure, temperature, nature of the solvent, and the nutrient). To avoid the difference of dissolution kinetics between pure SiO(2) and pure GeO(2), single phases Si(1-x)Ge(x)O(2) solid solutions were prepared and used as nutrients. The influence of the nature (cristobalite-type, glass) and the composition of this nutrient were also studied. Single crystals were grown in aqueous NaOH (0.2-1 M) solutions and in pure water. A wide range of pressures (95-280 MPa) and temperatures (315-505 °C) was investigated. Structures of single crystals with x = 0.07, 0.1, and 0.13 were refined, and it was shown that the structural distortion (i.e., θ and δ) increases with the atomic fraction of Ge in an almost linear way. Thus, the piezoelectric properties of Si(1-x)Ge(x)O(2) solid solution should increase with x, and this material could be a good candidate for technological applications requiring a high piezoelectric coupling factor or high thermal stability.
dc.language.isoen
dc.publisherAmerican Chemical Society
dc.title.enHydrothermal growth and structural studies of Si1-xGexO2 single crystals
dc.typeArticle de revue
dc.identifier.doi10.1021/ic200354p
dc.subject.halPhysique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
bordeaux.journalInorganic Chemistry
bordeaux.page4632-4639
bordeaux.volume50
bordeaux.issue10
bordeaux.peerReviewedoui
hal.identifierhal-00598364
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00598364v1
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