New lead-free perovskite relaxor ceramics derived from BaTiO<sub>3</sub> and containing scandium
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | SIMON, Annie | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | RAVEZ, Jean | |
| dc.date.issued | 2011 | |
| dc.description.abstractEn | New lead-free compositions of AMO<sub>3</sub> perovskite type were synthesized in the BaTi<sub>1-x</sub>(Nb<sub>1/2</sub>Sc<sub>1/2</sub>)<sub>x</sub>O<sub>3</sub>(0 ≤ x ≤ 1) system, with regards to the comparable electronic configurations of the various 6-coordinated cations. Special solid state reaction was used. The effect of the replacement of titanium by scandium and niobium in the B-site on structural and dielectric properties was investigated. For this, we have used X-ray diffraction and dielectric characterizations. Dielectric measurements performed on ceramics with 0 ≤ x ≤ 0.25 composition revealed that the small change in composition from BaTiO<sub>3</sub> has a strong influence on the dielectric properties: fast decreasing of the ferroelectric transition temperature for low values of x and evolution from classical ferroelectric for 0 ≤ x ≤ 0.075 to relaxor behavior for 0.075 < x ≤ 0.25. | |
| dc.language.iso | en | |
| dc.subject.en | Lead-free | |
| dc.subject.en | Perovskite | |
| dc.subject.en | Relaxor | |
| dc.subject.en | BaTiO3 | |
| dc.subject.en | Scandium | |
| dc.title.en | New lead-free perovskite relaxor ceramics derived from BaTiO<sub>3</sub> and containing scandium | |
| dc.type | Article de revue | |
| dc.identifier.doi | 10.1142/S2010135X11000240 | |
| dc.subject.hal | Chimie/Matériaux | |
| bordeaux.journal | Journal of Advanced Dielectrics | |
| bordeaux.page | 251-255 | |
| bordeaux.volume | 1 | |
| bordeaux.issue | 2 | |
| bordeaux.peerReviewed | oui | |
| hal.identifier | hal-00602024 | |
| hal.version | 1 | |
| hal.popular | non | |
| hal.audience | Internationale | |
| hal.origin.link | https://hal.archives-ouvertes.fr//hal-00602024v1 | |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal%20of%20Advanced%20Dielectrics&rft.date=2011&rft.volume=1&rft.issue=2&rft.spage=251-255&rft.epage=251-255&rft.au=SIMON,%20Annie&RAVEZ,%20Jean&rft.genre=article |
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