Afficher la notice abrégée

Structural analysis, growth and characterization of cadmiumgalliumtelluride (Cd0.89Ga0.11Te) thermoelectric semiconductor single crystals

hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPRAKASAM, Mythili
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorVIRAPHONG, Oudomsack
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorVEBER, Philippe
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPECHEV, Stanislav
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorDECOURT, Rodolphe
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMAGLIONE, Mario
hal.structure.identifierNational Institute for Materials Science [NIMS]
dc.contributor.authorVILLORA, Encarnacion G.
hal.structure.identifierNational Institute for Materials Science [NIMS]
dc.contributor.authorSHIMAMURA, Kiyoshi
dc.date.issued2012
dc.identifier.issn0022-0248
dc.description.abstractEnQuasi binary semiconductor compound of Cd/Ga/Te and the crystal dynamics involving the solubility of the gallium in CdTe were studied. The stiochiometry of the cadmium, gallium and telluride were optimized to obtain the singlecrystals of Cd0.89Ga0.11Te (CGT). CGT singlecrystals were grown by vertical Bridgman method for utility in thermoelectric devices. The optimum temperature profile was studied for obtaining the singlecrystal and the zincblende phase for CGT was identified. The structural analysis and refinement was done with Rietveld measurements. The crystal compositional analysis homogeneity was studied and the segregation of the telluride was analyzed by energy dispersive spectrum. The electrical resistivity was measured. The thermal conductivity measurement on CGT singlecrystals reveals the contribution of the phonon scattering leading to lower value of thermal conductivity.
dc.language.isoen
dc.publisherElsevier
dc.subject.enGrowth from melt
dc.subject.enBridgman technique
dc.subject.enSingle crystal growth
dc.subject.enSemiconducting II-VI materials
dc.subject.enGrowth from melt
dc.title.enStructural analysis, growth and characterization of cadmiumgalliumtelluride (Cd0.89Ga0.11Te) thermoelectric semiconductor single crystals
dc.typeArticle de revue
dc.identifier.doi10.1016/j.jcrysgro.2011.12.048
dc.subject.halChimie/Matériaux
bordeaux.journalJournal of Crystal Growth
bordeaux.page6-12
bordeaux.volume340
bordeaux.issue1
bordeaux.peerReviewedoui
hal.identifierhal-00700246
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00700246v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal%20of%20Crystal%20Growth&rft.date=2012&rft.volume=340&rft.issue=1&rft.spage=6-12&rft.epage=6-12&rft.eissn=0022-0248&rft.issn=0022-0248&rft.au=PRAKASAM,%20Mythili&VIRAPHONG,%20Oudomsack&VEBER,%20Philippe&PECHEV,%20Stanislav&DECOURT,%20Rodolphe&rft.genre=article


Fichier(s) constituant ce document

FichiersTailleFormatVue

Il n'y a pas de fichiers associés à ce document.

Ce document figure dans la(les) collection(s) suivante(s)

Afficher la notice abrégée