Effect of Mn and Nb Doped BaTiO3 in the Dielectric Properties in the Ba(Mn1/2Nb1/2)xTi1−xO3
| hal.structure.identifier | Laboratoire des Matériaux Ferroélectriques [LMF] | |
| dc.contributor.author | BOUJELBEN, Faiza | |
| hal.structure.identifier | Laboratoire des Matériaux Ferroélectriques [LMF] | |
| dc.contributor.author | KHEMAKHEM, Hamadi | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | SIMON, Annie | |
| dc.date.issued | 2012 | |
| dc.identifier.issn | 0361-5235 | |
| dc.description.abstractEn | Polycrystalline samples of BaTi1−x (Mn0.5Nb0.5)x O3 with x = 0.025, 0.05, 0.075, 0.1, 0.125, 0.15, and 0.175 have been synthesized by the high-temperature solid-state reaction technique. The effects of cationic substitution of manganese and niobium for titanium at B sites of the BaTiO3 perovskite lattice on symmetry and dielectric properties were investigated. X-ray diffraction at room temperature and dielectric permittivity in the temperature range from 85 K to 500 K and frequency range from 100 Hz to 2 × 105 Hz were studied. The evolution from a normal ferroelectric to a relaxor ferroelectric is emphasized. T C or T m decreases when both manganese and niobium are introduced into the lattice of BaTiO3. High dielectric constant of around 9000 at T C = 280 K was found for Ba Ti0.925(Mn0.5Nb0.5)0.075O3 ceramic. A relaxor ferroelectric with ΔT m = 60 K and er¢ of about 3500 at 10 kHz with T m = 150 K was found for the BaTi0.85(Mn0.5Nb0.5)0.15O3 sample. | |
| dc.language.iso | en | |
| dc.publisher | Institute of Electrical and Electronics Engineers | |
| dc.subject.en | Ferroelectrics | |
| dc.subject.en | X-ray diffraction | |
| dc.subject.en | Dielectric response | |
| dc.title.en | Effect of Mn and Nb Doped BaTiO3 in the Dielectric Properties in the Ba(Mn1/2Nb1/2)xTi1−xO3 | |
| dc.type | Article de revue | |
| dc.identifier.doi | 10.1007/s11664-012-2027-4 | |
| dc.subject.hal | Chimie/Matériaux | |
| bordeaux.journal | Journal of Electronic Materials | |
| bordeaux.page | 2250-2255 | |
| bordeaux.volume | 41 | |
| bordeaux.issue | 8 | |
| bordeaux.peerReviewed | oui | |
| hal.identifier | hal-00714515 | |
| hal.version | 1 | |
| hal.popular | non | |
| hal.audience | Internationale | |
| hal.origin.link | https://hal.archives-ouvertes.fr//hal-00714515v1 | |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal%20of%20Electronic%20Materials&rft.date=2012&rft.volume=41&rft.issue=8&rft.spage=2250-2255&rft.epage=2250-2255&rft.eissn=0361-5235&rft.issn=0361-5235&rft.au=BOUJELBEN,%20Faiza&KHEMAKHEM,%20Hamadi&SIMON,%20Annie&rft.genre=article |
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