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hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorFAURE, Cyril
hal.structure.identifierLaboratoire réactivité et chimie des solides - UMR CNRS 7314 UPJV [LRCS]
dc.contributor.authorCLATOT, Johnny
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorTEULÉ-GAY, Lionel
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorCAMPET, Guy
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorLABRUGÈRE, Christine
hal.structure.identifierNational Institute for Lasers, Plasmas and Radiation Physics [NILPRP]
dc.contributor.authorNISTOR, Magda
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorROUGIER, Aline
dc.date.issued2012
dc.identifier.issn0040-6090
dc.description.abstractEnSilicon doped Zinc Oxide thin films, so-called SZO, were deposited at room temperature on glass and plastic substrates by co-sputtering of ZnO and SiO2 targets. The influence of the SiO2 target power supply (from 30 to 75 W) on the SZO thin film composition and crystallinity is discussed. Si/Zn atomic ratio, determined by X-ray microprobe, increases from 1.2 to 8.2 at.%. For Si/Zn ratio equal and lower than 3.9%, SZO (S3.9ZO) thin films exhibit the Wurzite structure with the (0 0 2) preferred orientation. Larger Si content leads to a decrease in crystallinity. With Si addition, the resistivity decreases down to 3.5 × 10− 3 Ω*cm for SZO thin film containing 3.9 at.% of Si prior to an increase. The mean transmittance of S3.9ZO thin film on glass substrate approaches 80% (it is about 90% for the film itself) in the visible range (from 400 to 750 nm). Co-sputtered SZO thin films are suitable candidates for large area transparent conductive oxides.
dc.language.isoen
dc.publisherElsevier
dc.subject.enTransparent conductive oxides
dc.subject.enZinc oxide
dc.subject.enThin films
dc.subject.enSilicon
dc.subject.enDoping
dc.subject.enCo-sputtering
dc.title.enCo-sputtered ZnO:Si thin films as transparent conductive oxides
dc.typeArticle de revue
dc.identifier.doi10.1016/j.tsf.2012.10.006
dc.subject.halChimie/Matériaux
bordeaux.journalThin Solid Films
bordeaux.page151-156
bordeaux.volume524
bordeaux.peerReviewedoui
hal.identifierhal-00762293
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00762293v1
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