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hal.structure.identifierInstitut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dc.contributor.authorLEROY, Floriane
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorROUSSEAU, Anthony
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPAYAN, Sandrine
hal.structure.identifierInstitut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dc.contributor.authorDOGHECHE, El Hadj
hal.structure.identifierSchool of Computing, Electronics and Mathematics [Plymouth]
dc.contributor.authorJENKINS, David
hal.structure.identifierInstitut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dc.contributor.authorDECOSTER, Didier
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMAGLIONE, Mario
dc.date.issued2013
dc.identifier.issn0146-9592
dc.description.abstractEnFerroelectric BaTiO3 (BTO) thin films are grown by RF sputtering onto an indium tin oxide bottom electrode on a MgO single-crystal substrate. We have studied here the optical properties by the prism coupling technique. We report the ordinary and extraordinary refractive indices of the films, the film thickness, and the optical losses that are obtained on the planar waveguides: n0=2.224±0.001 and ne=2.219±0.001 at 1539 nm. Furthermore, in order to demonstrate the active property of the BTO films, we have investigated the electro-optic (EO) properties by using the change of the resonant coupling angle (variation of fundamental TE0 guided mode) when the transverse electric field is applied. The latter is induced by the refractive index variation (Δn) caused by the EO effect when a static electric field is applied transversely to the film. The EO coefficient obtain is about 18 pm/V for TE mode and 23 pm/V for TM modes at 1539 nm. This value illustrates the suitability of the BTO material thin film with a polycrystalline structure for applications such as modulations, switching, and interconnections.
dc.language.isoen
dc.publisherOptical Society of America - OSA Publishing
dc.subject.enElectro-optical materials
dc.subject.enGuided waves
dc.subject.enThin films
dc.title.enGuided-wave electro-optic characterization of BaTiO3 thin films using the prism coupling technique
dc.typeArticle de revue
dc.identifier.doi10.1364/OL.38.001037
dc.subject.halChimie/Matériaux
bordeaux.journalOptics Letters
bordeaux.page1037-1039
bordeaux.volume38
bordeaux.issue7
bordeaux.peerReviewedoui
hal.identifierhal-00804978
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00804978v1
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