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hal.structure.identifierMax Planck Institute of Microstructure Physics
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorKANNAN, Vijayanandhini
hal.structure.identifierMax Planck Institute of Microstructure Physics
dc.contributor.authorARREDONDO, Miryam
hal.structure.identifierMax Planck Institute of Microstructure Physics
dc.contributor.authorJOHANN, Florian
hal.structure.identifierMax Planck Institute of Microstructure Physics
dc.contributor.authorHESSE, Dietrich
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
hal.structure.identifierCentre de Caractérisation des Matériaux Avancés [CeCaMA]
dc.contributor.authorLABRUGÈRE, Christine
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMAGLIONE, Mario
hal.structure.identifierMax Planck Institute of Microstructure Physics
dc.contributor.authorVREJOIU, Ionela
dc.date.issued2013
dc.identifier.issn0040-6090
dc.description.abstractEnStrain-dependent microstructural modifications were observed in epitaxial BiCrO3 (BCO) thin films fabricated on single crystalline substrates, utilizing pulsed laser deposition. The following conditions were employed to modify the epitaxial-strain: (i) in-plane tensile strain, BCOSTO [BCO grown on buffered SrTiO3 (001)] and in-plane compressive strain, BCONGO [BCO grown on buffered NdGaO3 (110)] and (ii) varying BCO film thickness. A combination of techniques like X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (TEM) was used to analyse the epitaxial growth quality and the microstructure of BCO. Our studies revealed that in the case of BCOSTO, a coherent interface with homogeneous orthorhombic phase is obtained only for BCO film with thicknesses, d < 50 nm. All the BCOSTO films with d ≥ 50 nm were found to be strain-relaxed with an orthorhombic phase showing 1/2 <100> and 1/4 <101> satellite reflections, the latter oriented at 45° from orthorhombic diffraction spots. High angle annular dark field scanning TEM of these films strongly suggested that the satellite reflections, 1/2 <100> and 1/4 <101>, originate from the atomic stacking sequence changes (or "modulated structure") as reported for polytypes, without altering the chemical composition. The unaltered stoichiometry was confirmed by estimating both valency of Bi and Cr cations by surface and in-depth XPS analysis as well as the stoichiometric ratio (1 Bi:1 Cr) using scanning TEM-energy dispersive X-ray analysis. In contrast, compressively strained BCONGO films exhibited monoclinic symmetry without any structural modulations or interfacial defects, up to d ~ 200 nm. Our results indicate that both the substrate-induced in-plane epitaxial strain and the BCO film thickness are the crucial parameters to stabilise a homogeneous BCO phase in an epitaxially grown film.
dc.language.isoen
dc.publisherElsevier
dc.subject.enEpitaxy
dc.subject.enPolytype
dc.subject.enStrain
dc.subject.enDislocation
dc.subject.enMicroscopy
dc.title.enStrain dependent microstructural modifications of BiCrO3 epitaxial thin films
dc.typeArticle de revue
dc.identifier.doi10.1016/j.tsf.2013.07.053
dc.subject.halChimie/Matériaux
bordeaux.journalThin Solid Films
bordeaux.page130-139
bordeaux.volume545
bordeaux.peerReviewedoui
hal.identifierhal-00872769
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00872769v1
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