Mostrar el registro sencillo del ítem

A 27dBm Ku-Band SiGe Power Amplifier Working up to 90°C with High Robustness to the 2:1 SWR

dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorCOQUILLAS, B.
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorKERHERVE, E.
dc.contributor.authorREDOIS, S.
dc.contributor.authorAMIAUD, A.-C.
dc.contributor.authorROUSSEL, L.
dc.contributor.authorLOUIS, B.
dc.contributor.authorITCIA, E.
dc.contributor.authorMERLET, T.
dc.date.accessioned2022-08-26T08:09:07Z
dc.date.available2022-08-26T08:09:07Z
dc.date.issued2022-04-03
dc.identifier.urioai:crossref.org:10.23919/eumic50153.2022.9784063
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/140589
dc.description.abstractEnThis paper presents a compact Ku-Band SiGe cascode power amplifier (PA) with a saturated output power (Psat) higher than 27dBm up to 90°C and a highly robust power combination to the Standing Wave Ratio (SWR). Improved transistor and twisted coupler layout techniques are combined in a balanced architecture. As a proof of concept, the PA was implemented with a 0.13-µm SiGe BiCMOS technology. The measured performances at 18GHz show a Psat of 27.4dBm and 27.1dBm and a peak-PAE of 25.8% and 24.5% at 30°C and 90°C, respectively. With a 2:1 SWR the PAE and Psat drop less than 7.2% and 1.5dB, respectively.
dc.language.isoENen_US
dc.publisherIEEEen_US
dc.sourcecrossref
dc.subject.endefense industry
dc.subject.endesign methodology
dc.subject.endirectional coupler
dc.subject.enpower amplifier
dc.subject.entemperature measurement
dc.title.enA 27dBm Ku-Band SiGe Power Amplifier Working up to 90°C with High Robustness to the 2:1 SWR
dc.typeCommunication dans un congrès avec actesen_US
dc.identifier.doi10.23919/eumic50153.2022.9784063en_US
dc.subject.halSciences de l'ingénieur [physics]/Electroniqueen_US
bordeaux.hal.laboratoriesLaboratoire d’Intégration du Matériau au Système (IMS) - UMR 5218en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.conference.title16th European Microwave Integrated Circuits Conference, EuMIC 2021en_US
bordeaux.countrygben_US
bordeaux.title.proceedingEuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conferenceen_US
bordeaux.conference.cityLondresen_US
bordeaux.peerReviewedouien_US
bordeaux.import.sourcedissemin
hal.exportfalse
workflow.import.sourcedissemin
dc.rights.ccPas de Licence CCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2022-04-03&rft.au=COQUILLAS,%20B.&KERHERVE,%20E.&REDOIS,%20S.&AMIAUD,%20A.-C.&ROUSSEL,%20L.&rft.genre=proceeding


Archivos en el ítem

ArchivosTamañoFormatoVer

No hay archivos asociados a este ítem.

Este ítem aparece en la(s) siguiente(s) colección(ones)

Mostrar el registro sencillo del ítem