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A 23-24 GHz low power frequency synthesizer in 0.25 μm SiGe

hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorMAZOUFFRE, O.
dc.contributor.authorLAPOUYADE, H.
dc.contributor.authorBEGUERET, J.B.
dc.contributor.authorCATHELIN, A.
dc.contributor.authorBELOT, D.
hal.structure.identifierCentre d'Etudes Nucléaires de Bordeaux Gradignan [CENBG]
dc.contributor.authorHELLMUTH, P.
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorDEVAL, Y.
dc.date.issued2005-10-03
dc.date.conference2005-10-03
dc.description.abstractEnThis paper presents the design and the experimental measurements of a 24 GHz fully integrated fractional PLL, for ISM band, with a new low power prescaler. This circuit is implemented in a 0.25 mu m SiGe:C process from STMicroelectronics (BiCMOS7RF). The PLL power dissipation is 170 mW and fulfills a 23.7 to 24.9 GHz frequency locking range, while exhibiting a phase noise of -100 dBc/Hz at 100 KHz from the carrier. The simulated PLL unity-gain bandwidth is 36 MHz, with a phase margin of 54 degrees. The PLL uses a new latch-based prescaler (SRO) which exhibits a power dissipation of 0.68 GHz/mW
dc.language.isoen
dc.source.titleEuropean Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005
dc.title.enA 23-24 GHz low power frequency synthesizer in 0.25 μm SiGe
dc.typeCommunication dans un congrès
dc.subject.halSciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
bordeaux.page533-536
bordeaux.countryFR
bordeaux.title.proceedingEuropean Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005
bordeaux.conference.cityParis
bordeaux.peerReviewedoui
hal.identifierin2p3-00370534
hal.version1
hal.invitednon
hal.proceedingsoui
hal.conference.end2005-10-04
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//in2p3-00370534v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.btitle=European%20Gallium%20Arsenide%20and%20Other%20Semiconductor%20Application%20Symposium,%202005.%20EGAAS%202005&rft.date=2005-10-03&rft.spage=533-536&rft.epage=533-536&rft.au=MAZOUFFRE,%20O.&LAPOUYADE,%20H.&BEGUERET,%20J.B.&CATHELIN,%20A.&BELOT,%20D.&rft.genre=unknown


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