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dc.contributor.authorNATALI, F.
dc.contributor.authorPLANK, N.
dc.contributor.authorGALIPAUD, J.
dc.contributor.authorRUCK, B.J.
dc.contributor.authorTRODAHL, H. J.
hal.structure.identifierCentre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
dc.contributor.authorSEMOND, F.
hal.structure.identifierCentre d'Etudes Nucléaires de Bordeaux Gradignan [CENBG]
dc.contributor.authorSORIEUL, S.
dc.contributor.authorHIRSCH, L.
dc.date.issued2010-12-01
dc.identifier.issn0022-0248
dc.language.isoen
dc.publisherElsevier
dc.title.enEpitaxial growth of GdN on silicon substrate using an AlN buffer layer
dc.typeArticle de revue
dc.identifier.doi10.1016/j.jcrysgro.2010.09.030
dc.subject.halPhysique [physics]/Physique [physics]/Instrumentations et Détecteurs [physics.ins-det]
bordeaux.journalJournal of Crystal Growth
bordeaux.page3583-3587
bordeaux.volume312
bordeaux.peerReviewedoui
hal.identifierin2p3-00585159
hal.version1
hal.popularnon
hal.audienceNon spécifiée
hal.origin.linkhttps://hal.archives-ouvertes.fr//in2p3-00585159v1
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