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Recrystallization of amorphous ion implanted silicon carbide after thermal annealing

hal.structure.identifierService de recherches de métallurgie physique [SRMP]
dc.contributor.authorMIRO, S.
hal.structure.identifierService de recherches de métallurgie physique [SRMP]
dc.contributor.authorCOSTANTINI, J.-M.
hal.structure.identifierINSTRU
dc.contributor.authorSORIEUL, S.
hal.structure.identifierService de recherches de métallurgie physique [SRMP]
dc.contributor.authorGOSMAIN, L.
hal.structure.identifierCSNSM PCI
dc.contributor.authorTHOMÉ, L.
dc.date.issued2012
dc.identifier.issn0950-0839
dc.description.abstractEnSingle crystals of 6H-SiC were implanted at room temperature with 4-MeV Au ions to a fluence of 1015cm 2. Raman spectra showed that full amorphization was achieved. The recrystallization process was studied by micro-Raman spectrometry after isochronal thermal annealing between 700 and 1500 C. The spectra permitted the evolution upon annealing of Si-C bonds, and also of Si-Si and C-C bonds, to be followed. Amorphous phase relaxation takes place below 700 C; then recrystallization of the 6H polytype sets in at 700 C. At 900 C crystallites with different crystalline states are formed. Moreover, Raman spectra provide evidence of graphitic nanocluster formation at 1500 C.
dc.language.isoen
dc.publisherTaylor & Francis
dc.subject.enSiC
dc.subject.enRaman spectroscopy
dc.subject.enrecrystallization
dc.subject.enirradiation effects
dc.title.enRecrystallization of amorphous ion implanted silicon carbide after thermal annealing
dc.typeArticle de revue
dc.identifier.doi10.1080/09500839.2012.713133
dc.subject.halPlanète et Univers [physics]/Sciences de la Terre/Minéralogie
bordeaux.journalPhilosophical Magazine Letters
bordeaux.page633-639
bordeaux.volume92
bordeaux.peerReviewedoui
hal.identifierin2p3-00739573
hal.version1
hal.popularnon
hal.audienceNon spécifiée
hal.origin.linkhttps://hal.archives-ouvertes.fr//in2p3-00739573v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Philosophical%20Magazine%20Letters&rft.date=2012&rft.volume=92&rft.spage=633-639&rft.epage=633-639&rft.eissn=0950-0839&rft.issn=0950-0839&rft.au=MIRO,%20S.&COSTANTINI,%20J.-M.&SORIEUL,%20S.&GOSMAIN,%20L.&THOM%C3%89,%20L.&rft.genre=article


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