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Experimental study of the diffusion of Xe and Kr implanted at low concentrations in UO2 and determination of their trapping mechanisms

hal.structure.identifierGeoRessources
hal.structure.identifierCEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) [CEA-DES (ex-DEN)]
dc.contributor.authorGERARDIN, M.
hal.structure.identifierCentre d'Etudes Nucléaires de Bordeaux Gradignan [CENBG]
dc.contributor.authorGILABERT, E.
hal.structure.identifierCentre d'Etudes Nucléaires de Bordeaux Gradignan [CENBG]
dc.contributor.authorHORLAIT, D.
hal.structure.identifierConditions Extrêmes et Matériaux : Haute Température et Irradiation [CEMHTI]
dc.contributor.authorBARTHE, M.F.
hal.structure.identifierCEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) [CEA-DES (ex-DEN)]
dc.contributor.authorCARLOT, G.
dc.date.issued2021-12-01
dc.identifier.issn0022-3115
dc.description.abstractEnThe fission of uranium dioxide produces gaseous elements degrading nuclear fuel properties. A thorough understanding of the transport and release of gaseous products is thus essential. The present work focuses on xenon and krypton migration mechanism in uranium dioxide. Desorption experiments on ion implanted UO2 were performed at 1300°C. Xe and Kr releases were simulated using a mesoscale model that was developed taking into account single gas atom diffusion and defect traps. We showed that the defects have a high influence on Xe and Kr migration mechanisms and therefore have to be considered to accurately determine diffusion coefficients. We evaluated the diffusion coefficient of Xe and Kr at (1.73 ± 0.15)x10−20 m2/s at 1300°C and we showed that the diffusion of rare gases is subjected to two trapping mechanisms. The first occurs during the ion implantation and the second during high-temperature annealings. The nature of the trapping sites is discussed in the light of the literature on radiation induced defects. This study also consolidates the use of non activated UO2 implanted with heavy ions as a less-hazardeous substitute for irradiated UO2.
dc.language.isoen
dc.publisherElsevier
dc.title.enExperimental study of the diffusion of Xe and Kr implanted at low concentrations in UO2 and determination of their trapping mechanisms
dc.typeArticle de revue
dc.identifier.doi10.1016/j.jnucmat.2021.153174
dc.subject.halChimie/Matériaux
dc.subject.halChimie/Radiochimie
bordeaux.journalJournal of Nuclear Materials
bordeaux.page153174
bordeaux.volume556
bordeaux.peerReviewedoui
hal.identifierhal-03414557
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-03414557v1
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