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Review—Hybrid Bonding-Based Interconnects: A Status on the Last Robustness and Reliability Achievements

dc.rights.licenseopenen_US
dc.contributor.authorMOREAU, S.
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorJOURDON, Joris
dc.contributor.authorLHOSTIS, S.
dc.contributor.authorBOUCHU, D.
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorAYOUB, Bassel
dc.contributor.authorARNAUD, L.
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorFREMONT, Helene
IDREF: 127007571
dc.date.accessioned2022-03-31T15:52:04Z
dc.date.available2022-03-31T15:52:04Z
dc.date.issued2022-02-01
dc.identifier.issn2162-8769en_US
dc.identifier.urioai:crossref.org:10.1149/2162-8777/ac4ffe
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/136587
dc.description.abstractEnThis paper reviews the most significant qualification and reliability achievements obtained, over the last 6 years, by the scientific community for hybrid bonding-based interconnects (HB) also named Cu–Cu or Cu/SiO2 bonding. First, the definition of words qualification, robustness and reliability are given to avoid misunderstanding about the published results. Second, the five potential threats (moisture ingress, thermomechanical stresses, electromigration, Cu diffusion, dielectric breakdown) are presented. Finally, the publications of six industrials or Research and Technology Organizations are summarized and discussed. Most of the published data are related to qualification results (pass or fail). Few studies published in-depth studies, mainly on electromigration (Black’s parameters extraction and failure analysis) and copper diffusion (electrical and analytical characterizations). To conclude, once the manufacturing issues (surface preparation, alignment…) have been solved, this technology is robust and reliable at pitches > 1 μm as it reacts, roughly, like a conventional back-end of line (BEoL) interconnect.
dc.description.sponsorshipNANOELEC - ANR-10-AIRT-0005en_US
dc.language.isoENen_US
dc.sourcecrossref
dc.title.enReview—Hybrid Bonding-Based Interconnects: A Status on the Last Robustness and Reliability Achievements
dc.typeArticle de revueen_US
dc.identifier.doi10.1149/2162-8777/ac4ffe
dc.subject.halSciences de l'ingénieur [physics]/Autreen_US
bordeaux.journalECS Journal of Solid State Science and Technologyen_US
bordeaux.page024001en_US
bordeaux.volume11en_US
bordeaux.hal.laboratoriesLaboratoire d’Intégration du Matériau au Système (IMS) - UMR 5218en_US
bordeaux.issue2en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
bordeaux.import.sourcedissemin
hal.identifierhal-03626780
hal.version1
hal.date.transferred2022-03-31T15:57:54Z
hal.exportfalse
workflow.import.sourcedissemin
dc.rights.ccPas de Licence CCen_US
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