Afficher la notice abrégée

dc.rights.licenseopenen_US
hal.structure.identifierInstitut de Mécanique et d'Ingénierie [I2M]
dc.contributor.authorBATTAGLIA, Jean-Luc
IDREF: 084712562
hal.structure.identifierInstitut de Mécanique et d'Ingénierie [I2M]
dc.contributor.authorKUSIAK, Andrzej
IDREF: 084712899
hal.structure.identifierInstitut de Mécanique et d'Ingénierie [I2M]
dc.contributor.authorGHOSH, Kanka
dc.date.accessioned2021-12-09T16:39:40Z
dc.date.available2021-12-09T16:39:40Z
dc.date.issued2021-02-07
dc.identifier.issn0021-8979en_US
dc.identifier.urioai:crossref.org:10.1063/5.0020983
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/124098
dc.description.abstractEnThis article presents three photothermal methods dedicated to the measurement of the thermal properties of chalcogenide alloys, used as a central element in the new generations of non-volatile memory. These materials have two phases, amorphous and crystalline, possessing a sharp contrast in their electrical and thermal properties. In the crystalline phase, the properties also change very significantly with temperature. The control of the temperature of the samples, the choice of transducers, and the time or frequency characteristic values of the photothermal excitation are thoroughly discussed. Each photothermal technique is described from the experimental point of view as well as from the inverse method, performed to identify the parameters of interest. The identified thermal properties mainly concern the thermal conductivity and the thermal resistance at the interfaces between the phase-change materials and the materials in contact as encountered in the production of the microelectronic memory device. Assessing various photothermal techniques, the study suggests that pulsed photothermal radiometry is the most effective method for sensitive high-temperature measurements of thermal properties of the phase-change materials.
dc.language.isoENen_US
dc.sourcecrossref
dc.title.enThe use of photothermal techniques for thermal conductivity and thermal boundary resistance measurements of phase-change chalcogenides alloys
dc.typeArticle de revueen_US
dc.identifier.doi10.1063/5.0020983en_US
dc.subject.halSciences de l'ingénieur [physics]/Matériauxen_US
bordeaux.journalJournal of Applied Physicsen_US
bordeaux.page055106en_US
bordeaux.volume129en_US
bordeaux.hal.laboratoriesInstitut de Mécanique et d’Ingénierie de Bordeaux (I2M) - UMR 5295en_US
bordeaux.issue5en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.institutionINRAEen_US
bordeaux.institutionArts et Métiersen_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
bordeaux.identifier.funderIDHorizon 2020en_US
bordeaux.import.sourcedissemin
hal.identifierhal-03347651
hal.version1
hal.exporttrue
workflow.import.sourcedissemin
dc.rights.ccCC BYen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal%20of%20Applied%20Physics&rft.date=2021-02-07&rft.volume=129&rft.issue=5&rft.spage=055106&rft.epage=055106&rft.eissn=0021-8979&rft.issn=0021-8979&rft.au=BATTAGLIA,%20Jean-Luc&KUSIAK,%20Andrzej&GHOSH,%20Kanka&rft.genre=article


Fichier(s) constituant ce document

Thumbnail

Ce document figure dans la(les) collection(s) suivante(s)

Afficher la notice abrégée