Buscar
-
Highly Linear Large Signal Compact Voltage-to-Current Converter in 28 nm FD-SOI Technology
(2022 IEEE 13th Latin America Symposium on Circuits and System (LASCAS), 2022 IEEE 13th Latin America Symposium on Circuits and System (LASCAS), cl, Puerto Varas, 2022-06-08)Communication dans un congrès avec actes -
A Zero Temperature Coefficient Voltage Reference, Stability and Versatility using 28nm FD-SOI Technology
Actes de congrès/Proceedings -
Proposal and Application of Equivalent MOSFET with different temperature coefficient of threshold voltage
Actes de congrès/Proceedings -
THz pulse generation and single shot detection in a single ZnTe Crystal IRMMW- THz 2022
Communication dans un congrèsLibre acceso -
A (0.75-1.13)mW and (2.4-5.2)ps RMS jitter Integer-N based Dual-Loop PLL for Indoor and Outdoor Positioning in 28nm FD-SOI CMOS Technology
(IEEE Transactions on Circuits and Systems II: Express Briefs. pp. 1-1, 2023-07-05)Article de revue -
A 2.45GHz SiGe Power Amplifier with a Novel Digital Predistortion using Orthogonal Sequences
Communication dans un congrès -
A Block-based LMS using the Walsh Transform for Digital Predistortion of Power Amplifiers
(IEEE Transactions on Communications. pp. 1-1, 2023-07-13)Article de revueLibre acceso -
Impacts of additive manufacturing on supply chains: an empirical investigation
(Supply Chain Forum: An International Journal. vol. 24, n° 2, pp. 182-193, 2022-11-11)Article de revue -
Amplificateur de puissance SiGe en bande Ku avec puissance de sortie élevée et robustesse SWR jusqu'à 120 °C
(IEEE Transactions on Circuits and Systems I: Regular Papers. vol. 70, n° 7, pp. 1-8, 2023-05-29)Article de revue -
Redox-active ions unlock substitutional doping in halide perovskites
(Materials Horizons. vol. 10, n° 8, pp. 2845-2853, 2023-07-06)Article de revueLibre acceso