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2D α‐In2Se3 Flakes for High Frequency Tunable and Switchable Film Bulk Acoustic Wave Resonators

dc.rights.licenseopenen_US
dc.contributor.authorSUN, Jiayi
dc.contributor.authorCAI, Weifan
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorYANG, Yang
dc.contributor.authorZHUANG, Yihao
dc.contributor.authorZHANG, Qing
dc.date.accessioned2025-12-15T08:55:16Z
dc.date.available2025-12-15T08:55:16Z
dc.date.issued2024-11-19
dc.identifier.issn2199-160Xen_US
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/207965
dc.description.abstractEnAbstractTunable and switchable film bulk acoustic resonators (FBARs) with the capability of dynamically adjusting their resonant frequencies hold significant promise for advanced multi‐band radio frequency (RF) communication systems. However, tunable and switchable FBARs based on conventional thin ferroelectric materials face several challenges in meeting the demands of advanced RF applications. Specifically, submicron‐thick ferroelectric materials suffer from degradation in piezoelectric performance due to the strong scattering of acoustic waves caused by surface defects, as well as the inconsistency in crystal orientation. Recent advances in 2D ferroelectric materials create new opportunities for high‐performance tunable and switchable FBARs. Here, the first batch of FBAR chips based on 2D α‐In2Se3 flakes is reported. The α‐In2Se3‐based FBARs are normally under the on‐state and possess a small off‐voltage of −4 V. A tuning range of 26 MHz is achieved with a control voltage from −2 to 4 V at the resonant frequency of 8.6 GHz. To the best of the author's knowledge, this is the first batch of tunable FBARs that can function beyond the sub‐6 GHz band. This work demonstrates for the first time that 2D ferroelectric materials are very promising for high‐frequency tunable and switchable FBARs.
dc.language.isoENen_US
dc.title.en2D α‐In2Se3 Flakes for High Frequency Tunable and Switchable Film Bulk Acoustic Wave Resonators
dc.typeArticle de revueen_US
dc.identifier.doi10.1002/aelm.202400498en_US
dc.subject.halSciences de l'ingénieur [physics]en_US
bordeaux.journalAdvanced Electronic Materialsen_US
bordeaux.volume11en_US
bordeaux.hal.laboratoriesIMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218en_US
bordeaux.issue4en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.teamWAVES - MDAen_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
bordeaux.import.sourcecrossref
hal.popularnonen_US
hal.audienceInternationaleen_US
hal.exporttrue
workflow.import.sourcecrossref
dc.rights.ccCC BYen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Advanced%20Electronic%20Materials&rft.date=2024-11-19&rft.volume=11&rft.issue=4&rft.eissn=2199-160X&rft.issn=2199-160X&rft.au=SUN,%20Jiayi&CAI,%20Weifan&YANG,%20Yang&ZHUANG,%20Yihao&ZHANG,%20Qing&rft.genre=article


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