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Field-effect transistor based on poly(3-hexylthiophene): effect of impurities

dc.rights.licenseopen
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorURIEN, Mathieu
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorWANTZ, Guillaume
hal.structure.identifierLaboratoire de Chimie des polymères organiques [LCPO]
dc.contributor.authorCLOUTET, Eric
IDREF: 151048681
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorVIGNAU, Laurence
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorTARDY, Pascal
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorHIRSCH, Lionel
IDREF: 111272459
hal.structure.identifierLaboratoire de Chimie des polymères organiques [LCPO]
dc.contributor.authorCRAMAIL, Henri
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorPARNEIX, Jean-Paul
dc.date.accessioned2020
dc.date.available2020
dc.date.created2007
dc.date.conference2007
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/20601
dc.description.abstractEnOrganic field-effect transitors (OFETs) based on regio-regular-poly(3-hexylthiophene) (P3HT) have been studied as a function of the amount of impurities in the active polymer. P3HT have been synthesized and successively purified. Transistors based on each fraction have been manufactured on a polyimide dielectric following a procedure described by Nunzi and co. The configuration is bottom-gate of ITO coated glass and evaporated gold top drain and source electrodes. The channel is 3 mm wide and 40 µm long.P3HT fractions have been analyzed by RBS and PIXE spectroscopies to show the presence of remaining monomers, reactants or catalysers. Impurities such as Ni, Cl, Mg, Ca, Fe and Zn have been detected in non-fully purified P3HTs. The final product (F4) is free of impurities. We demonstrate that such impurities have a significant effect on OFETs. The on/off ratio is strongly affected. The current at 0 V gate bias strongly increases as a function of impurities. Because saturation of OFETs vary as a function of impurities, the mobility has been extracted from the linear regime of characteristics and is found slightly dependent on the impurity content. It is believed that defects act as dopant moities since similar mobility dependence has already been observed in the case of electrochemically doped-P3HT by Jiang et al
dc.language.isoen
dc.subject.enOFET
dc.subject.enP3HT
dc.subject.enImpurities
dc.title.enField-effect transistor based on poly(3-hexylthiophene): effect of impurities
dc.typeCommunication dans un congrès avec actes
dc.subject.halSciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
bordeaux.hal.laboratoriesLaboratoire de Chimie des Polymères Organiques (LCPO) - UMR 5629*
bordeaux.institutionBordeaux INP
bordeaux.institutionUniversité de Bordeaux
bordeaux.countryNL
bordeaux.title.proceedingInternational Conference on Organic Electronic (ICOE)
bordeaux.conference.cityEindhoven
bordeaux.peerReviewedoui
hal.identifierhal-00415566
hal.version1
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00415566v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.au=URIEN,%20Mathieu&WANTZ,%20Guillaume&CLOUTET,%20Eric&VIGNAU,%20Laurence&TARDY,%20Pascal&rft.genre=proceeding


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